Related papers: Instability Mechanism for STT-MRAM switching
The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO which has complex anisotropy. We show…
Superparamagnetic magnetic tunnel junctions (sMTJs) are promising components for true random number generation and probabilistic computing. Achieving high-frequency fluctuation while maintaining reliable control over output level is…
Magnetic switching of a single-molecule magnet (SMM) due to spin-polarized current is investigated theoretically. The charge transfer between the electrodes takes place via the lowest unoccupied molecular orbital (LUMO) of the SMM.…
In this paper we propose a new method for the study and visualization of dynamic processes in magnetic nanostructures, and for the accurate calculation of rates for such processes. The method is illustrated for the case of switching of a…
The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic…
The orientation of the order parameter of quantum magnets can be used to store information in a dense and efficient way. Switching this order parameter corresponds to writing data. To understand how this can be done, we study a precessional…
Random matrix theory of the transition strengths is applied to transport in the strongly localized regime. The crossover distribution function between the different ensembles is derived and used to predict quantitatively the {\sl universal}…
Understanding the magnetization switching process in ferromagnetic thin films is essential for many technological applications. We investigate the effects of periodic driving via magnetic fields on a macrospin system under explicit…
Understanding and controlling phase transitions is a fundamental part of physics and has been central to many technological revolutions, from steam engines to field-effect transistors. At present, there is strong interest in materials with…
A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…
Reliable operation of perpendicular spin-transfer-torque magnetic random-access memory (p-STT-MRAM) requires control of magnetic alignment within the synthetic antiferromagnet (SAF) reference layer. At nanopillar dimensions, however,…
Large spin current applied to a uniform ferromagnet leads to a spin-wave instability as pointed out recently. In this paper, it is shown that such spin-wave instability is absent in a state containing a domain wall, which indicates that…
Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we…
The magnetic reversal by spin-polarized current of a magnetic junction consisting of two ferromagnetic layers and a nonmagnetic spacer in between is considered. Initially, the free layer is magnetized antiparallel to the pinned layer by an…
Highly symmetric magnetic environments have been suggested to stabilize the magnetic information stored in magnetic adatoms on a surface. Utilized as memory devices such systems are subjected to electron tunneling and external magnetic…
Shuttling of electrons in single-molecule transistors with magnetic leads in the presence of an external magnetic field is considered theoretically. For a current of partially spin-polarized electrons a shuttle instability is predicted to…
We study parametric instability in a magnomechanical system, specifically examining magnon tunneling between moving ferromagnetic insulators. Our analysis reveals that quantum fluctuations generate spin currents above a critical velocity…
The energy transition is causing many stability-related challenges for power systems. Transient stability refers to the ability of a power grid's bus angles to retain synchronism after the occurrence of a major fault. In this paper a…
Spin Transfer Torque MRAMs are attractive due to their non-volatility, high density and zero leakage. However, STT-MRAMs suffer from poor reliability due to shared read and write paths. Additionally, conflicting requirements for data…
We study the stability of magnetization precessions induced in spin-transfer devices by the injection of spin-polarized electric currents. Instability conditions are derived by introducing a generalized, far-from-equilibrium interpretation…