Related papers: Large spatially-resolved rectification in a donor-…
Structural and electronic properties of silicene adsorbed by five kinds of transition metal atoms (Cu, Ag, Au, Pt, and Ir) are systematically studied by using first-principles calculations. We find that such adsorption can induce a band gap…
We demonstrate that simultaneous reconstruction of scattering and absorption of a mesoscopic system using angularly-resolved measurements of scattered light intensity is possible. Image reconstruction is realized based on the algebraic…
The Schottky diode, BN/GaN layered composite contacting to bulk aluminum, is theoretically plausible to harvest wireless energy above X-band. According to our first principle calculation, the insertion of GaN layers dramatically influences…
We present a model and a rigorous method to calculate the transmission coefficient of silicon micro-rings with complex waveguide cross-section including non-linear effects and self-heating, with very short simulation times. The method is…
Molecular rectifiers are key functional components of molecular-scale integrated circuits, yet achieving high rectification ratios remains a longstanding challenge due to the intrinsic symmetry of resonant tunneling and the complexity of…
The K130 Room Temperature Cyclotron (RTC) at the Variable Energy Cyclotron Centre (VECC), Kolkata has delivered a variety of ion beams for experimental programs with stable performance since the 1970s. The extracted beams are transported to…
In this letter, we propose the resonant tunneling diode (RTD) based on a double-barrier graphene/boron nitride (BN) heterostructure as device suitable to take advantage of the elaboration of atomic sheets containing different domains of BN…
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An…
Light activated local stimulation and sensing of biological cells offers enormous potential for minimally invasive bioelectronic interfaces. Organic semiconductors are a promising material class to achieve this kind of transduction due to…
We study spin transport in a fully hBN encapsulated monolayer-graphene van der Waals (vdW) heterostructure, at room temperature. A top-layer of bilayer-hBN is used as a tunnel barrier for spin-injection and detection in graphene with…
When semiconducting transition metal dichalcogenides heterostructures are stacked the twist angle and lattice mismatch leads to a periodic moir\'e potential. As the angle between the layers changes, so do the electronic properties. As the…
Following our previous results, which provide evidence for the emergence of a chiral p-wave triplet-pairing component in superconducting Nb upon the adsorption of chiral molecules, we turned to investigate whether such an effect can take…
We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si…
We report on a new type of rectifier which is in full contact equilibrium and thus, if down-sized to the nanoscale, shows no drift even if exposed to elevated temperatures and/or extreme waiting times. This is in contrast to existing diodes…
A multi-magnetron microwave source, a metamaterial transmitting antenna, and a large power rectenna array are presented to build a near-field 2.45 GHz microwave power transmission system. The square 1 m2 rectenna array consists of sixteen…
In our tunneling investigation using Andreev superconductor - normal metal - superconductor contacts on LiFeAs single crystals we observed two reproducible independent subharmonic gap structures at dynamic conductance characteristics. From…
We fabricated fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs) with low junction resistance-area products (several $\Omega$ $\mu$m$^2$) and conducted a theoretical estimation of square-low rectifying performance for a…
The Schottky barrier of a metal-semiconductor junction is one of the key quantities affecting the charge transport in a transistor. The Schottky barrier height depends on several factors, such as work function difference, local atomic…
New results from tunneling spectroscopies on near optimally-doped single crystals of Tl_{2}Ba_{2}CuO_{6} (Tl-2201) junctions are presented. The superconductor-insulator-normal metal (SIN) tunnel junctions are obtained using the…
N-heterotriangulenes (N-HTAs) represent a class of functional molecules with high potential for optoelectronic materials, for example as electron donating compounds in donor/acceptor (D/A) systems. The capability of two different N-HTAs,…