Related papers: Lattice strain and tilt mapping in stressed Ge mic…

We couple a laser-based, space-resolved dynamic light scattering apparatus to a universal testing machine for mechanical extensional tests. We perform simultaneous optical and mechanical measurements on polyether ether ketone, a…

We report a first exploration of High-angular-Resolution Electron Backscatter Diffraction, without using simulated Electron Backscatter Diffraction patterns as a reference, for absolute stress and orientation measurements in polycrystalline…

Here we analyze a three-dimensional distribution of crystallographic slip measured in-situ during the uniaxial deformation of hexagonal Ti-7Al. The slip field is reconstructed using a novel methodology that combines spatially resolved…

We report the creation of Ge$_2$Sb$_2$Te$_5$ metasurfaces on sapphire substrates by the ablation method and the study of their structural properties by scanning electron microscopy (SEM), atomic force microscopy (AFM), and optical…

We use femtosecond time-resolved hard x-ray scattering to detect coherent acoustic phonons excited during ultrafast laser demagnetization of bcc Fe films. We determine the lattice strain propagating through the film through analysis of the…

We report on a systematic study of the stress transferred from an electromechanical piezo-stack into GaAs wafers under a wide variety of experimental conditions. We show that the strains in the semiconductor lattice, which were monitored in…

Due to their superior fatigue strength, martensitic steels are the material of choice for high cyclic loading applications such as coil springs. However, crack propagation is influenced by residual stresses and their interaction is poorly…

Lattice strain measurement of nanoscale semiconductor devices is crucial for the semiconductor industry as strain substantially improves the electrical performance of transistors. High resolution scanning transmission electron microscopy…

Electron diffraction through a thin patterned silicon membrane can be used to create complex spatial modulations in electron distributions by varying the intensity of different reflections using parameters such as crystallographic…

Compression of micro-pillars is followed in situ by a quick nano-focused X-ray scanning microscopy technique combined with three-dimensional reciprocal space mapping. Compared to other attempts using 2 X-ray nanobeams, it avoids any motion…

High angular resolution electron backscatter diffraction (HR-EBSD) affords an increase in angular resolution, as compared to 'conventional' Hough transform based EBSD, of two orders of magnitude, enabling measurements of relative…

Precession of a converged beam during acquisition of a 4D-STEM dataset improves strain, orientation, and phase mapping accuracy by averaging over continuous angles of illumination. Precession experiments usually rely on integrated systems,…

Identifying and understanding the mechanisms behind strong phonon-phonon scattering in condensed matter systems is critical to maximizing the efficiency of thermoelectric devices. To date, the leading method to address this has been to…

Quasi-two-dimensional (quasi-2D) materials hold promise for future electronics because of their unique band structures that result in electronic and mechanical properties sensitive to crystal strains in all three dimensions. Quantifying…

In the presented research, the intergranular elastic interaction and the second-order plastic incompatibility stress in textured ferritic and austenitic steels were investigated by means of diffraction. The lattice strains were measured…

This article presents a measurement technique and data analysis tool to perform 3D grain distribution mapping and indexing of oligocrystalline samples using neutrons: Laue three-dimensional neutron diffraction (Laue3DND). The approach…

The measurement of the Si lattice parameter by x-ray interferometry assumes the use of strain-free crystals, which might not be true because of intrinsic stresses due to surface relaxation, reconstruction, and oxidation. We used x-ray…

We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of ~0.7% is achieved by means of a stress concentration technique that allows the…

Nanoscale strain mapping by four-dimensional scanning transmission electron microscopy (4D-STEM) relies on determining the precise locations of Bragg-scattered electrons in a sequence of diffraction patterns, a task which is complicated by…

Quantitative interpretation of transmission electron microscopy (TEM) data of crystalline specimens often requires the accurate knowledge of the local crystal orientation. A method is presented which exploits momentum-resolved scanning TEM…