Related papers: Investigating Energy Scales of Fractional Quantum …
We report a theoretical analysis of the half-polarized quantum Hall states observed in a recent experiment. Our numerical results indicate that the ground state energy of the quantum Hall $\nu= 2/3$ and $\nu= 2/5$ states versus spin…
Reports of weak local minima in the magnetoresistance at $\nu=2+3/5$, $2+3/7$, $2+4/9$, $2+5/9$, $2+5/7$, and $2+5/8$ in the second Landau level of the electron gas in GaAs/AlGaAs left open the possibility of fractional quantum Hall states…
Fractional quantum Hall effect energy gaps have been measured in GaAs/GaAlAs heterojunctions as a function of Zeeman energy, which is varied by applying hydrostatic pressure up to 20 kbar. The gap at v=1/3 decreases with pressure until the…
A profound manifestation of topologically non-trivial states of matter is the occurrence of fractionally charged elementary excitations. The quantum spin Hall insulator state is a fundamentally novel quantum state of matter that exists at…
Magnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor $\nu=1/2$ as we tilt the sample in the magnetic field. Starting with a…
We report the first unambiguous observation of a fractional quantum Hall state in the Landau level of a two-dimensional hole sample at the filling factor $\nu=8/3$. We identified this state by a quantized Hall resistance and an activated…
Analyzing the effective conformal field theory for the parafermionic Hall states, corresponding to filling fractions nu_k=2+k/(kM+2), k=2,3,..., M odd, we show that the even k plateaux are expected to be more stable than their odd k…
Topological states of matter are characterized by topological invariant, which are physical quantities whose values are quantized and do not depend on details of the measured system. Of these, the easiest to probe in experiments is the…
The activation gaps for fractional quantum Hall states at filling fractions $\nu=n/(2n+1)$ are computed for heterojunction, square quantum well, as well as parabolic quantum well geometries, using an interaction potential calculated from a…
We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor…
We compute energy gaps for spin-polarized fractional quantum Hall states in the lowest Landau level at filling fractions nu=1/3, 2/5,3/7 and 4/9 using exact diagonalization of systems with up to 16 particles and extrapolation to the…
In the fractional quantum Hall effect regime we measure diagonal ($\rho_{xx}$) and Hall ($\rho_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions,…
Fractional conductance is measured by partitioning $\nu = 1$ edge state using gate-tunable fractional quantum Hall (FQH) liquids of filling 1/3 or 2/3 for current injection and detection. We observe two sets of FQH plateaus 1/9, 2/9, 4/9…
Fractional quantum Hall states (FQHS) with the filling factor nu = p/q of q < 21 are examined and their energies are calculated. The classical Coulomb energy is evaluated among many electrons; that energy is linearly dependent on 1/nu. The…
We use the dynamical structure factors of the quantum Hall states at $\nu=1/3$ and $\nu=1/2$ in the lowest Landau level to study their excitation spectrum. Using the density matrix renormalization group in combination with the…
We report on our theoretical investigations that point to the possibility of a fractional quantum Hall effect with partial spin polarization at $\nu=3/8$. The physics of the incompressible state proposed here involves p-wave pairing of…
We present a model of dissipative transport in the fractional quantum Hall regime. Our model takes account of tunneling through saddle points in the effective potential for excitations created by impurities. We predict the temperature range…
Confinement of small-gapped fractional quantum Hall states facilitates quasiparticle manipulation and is an important step towards quasiparticle interference measurements. Demonstrated here is conduction through top gate defined, narrow…
Single-layer and Bilayer of graphene are new classes of two-dimensional electron systems with unconventional band structures and valley degrees of freedom. The ground states and excitations in the integer and fractional quantum Hall regimes…
In a previous work, we reported exact results of energies of the ground state in the fractional quantum Hall effect (FQHE) regime for systems with up to $N_{\text{e}} = 6$ electrons at the filling factor $\nu = 1/3$ by using the method of…