Related papers: Three-waveform bidirectional pumping of single ele…
Optical techniques for the quantum control of the dynamics of multiexciton states in a semiconductor quantum dot are explored in theory. Composite bichromatic phase-locked pulses are shown to reduce the time of elementary quantum operations…
In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we…
We report on strong renormalization encountered in periodically driven interacting quantum dots in the non-adiabatic regime. Correlations between lead and dot electrons enhance or suppress the amplitude of driving depending on the sign of…
Time periodic perturbations of an electron system on a ring are examined. For small frequencies periodic small amplitude perturbations give rise to side band currents which in leading order are inversely proportional to the frequency. These…
Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could…
We report a theoretical analysis of parametric electron pump through a quantum dot in the Kondo regime. In the adiabatic regime, we have derived the expression for pumped current in the Kondo regime using non-equilibrium Green's function.…
A silicon electron pump operating at the temperature of liquid helium has demonstrated repeatable operation with sub-ppm accuracy. The pump current, approximately 168 pA, is measured by three laboratories, and the measurements agree with…
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron…
We consider the full driven quantum dynamics of a qubit realized as spin of electron in a one-dimensional double quantum dot with spin-orbit coupling. The driving perturbation is taken in the form of a single half-period pulse of electric…
Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility…
Solid-state quantum computer architectures with qubits encoded using single atoms are now feasible given recent advances in atomic doping of semiconductors. Here we present a charge qubit consisting of two dopant atoms in a semiconductor…
Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing.…
We present the results of a finite-element solution of the Laplace equation for the silicon-based trench-isolated double quantum-dot and the capacitively-coupled single-electron transistor device architecture. This system is a candidate for…
Efficient light-matter interaction at the single-photon level is of fundamental importance in emerging photonic quantum technology. A fundamental challenge is addressing multiple quantum emitters at once, as intrinsic inhomogeneities of…
We propose a spin-selective coherent electron transfer in a silicon-quantum-dot array. Oscillating magnetic fields and temporally controlled gate voltages are utilised to separate the electron wave function into different quantum dots…
The noise properties of pump currents through an open double quantum dot setup with non-adiabatic ac driving are investigated. Driving frequencies close to the internal resonances of the double dot-system mark the optimal working points at…
Recent experimental developments in the field of semiconductor quantum dot spectroscopy will be discussed. First we report about single quantum dot exciton two-level systems and their coherent properties in terms of single qubit…
The majority of experimental realizations of single-electron sources rely on the periodic manipulation of the tunnel junctions through their gate voltages, and thus require a high level of control over the system. To circumvent the…
We propose the concept of a quantized single-electron source based on the interplay between Coulomb blockade and magnetic flux-controllable superconducting proximity effect. We show that flux dependence of the induced energy gap in the…
We have incorporated an aluminum single electron transistor (SET) directly on top of a vertical quantum dot, enabling the use of the SET as an electrometer that is extremely responsive to the motion of charge into and out of the dot. Charge…