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Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V…
Pentacene is known to grow on isotropic silicon oxide surfaces in a substrate-induced phase with fiber textured crystallites. This growth study reports on the growth of pentacene crystallites on uniaxially oriented surfaces. Silica…
The ferrimagnetic spinel oxide Zn(x)Fe(3-x)O(4) combines high Curie temperature and spin polarization with tunable electrical and magnetic properties, making it a promising functional material for spintronic devices. We have grown epitaxial…
This review covers the important advances in recent years in the physics of thin film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin film form. We introduce the current state of…
Thin films of silicon oxide (SiOx) are mixtures of semiconductive c-Si nanoclusters (NC) embedded in an insulating g-SiO2 matrix. Tour et al. have shown that a trenched thin film geometry enables the NC to form semiconductive filamentary…
We present an efficient and general method to identify promising candidate configurations for thin-film oxides and to determine structural characteristics of (metastable) thin-film structures using ab initio calculations. At the heart of…
The applicability of standard methods for compositional analysis is limited for H-containing films. Neutron reflectometry is a powerful, non-destructive method that is especially suitable for these systems due to the large negative…
The oxygen stoichiometry is an essential key to tune functional properties of advanced oxide materials and thus has motivated numerous studies of the oxygen off-stoichiometry diagram, with the aim to determine and control structural,…
The epitaxial stabilization of a single layer or superlattice structures composed of complex oxide materials on polar (111) surfaces is severely burdened by reconstructions at the interface, that commonly arise to neutralize the polarity.…
We report on the structural properties of epitaxial FeO layers grown by molecular beam epitaxy on MgO(111). The successful stabilization of polar FeO films as thick as 16 monolayers (ML), obtained by deposition and subsequent oxidation of…
The oxidation of the Ni(111) surface is studied experimentally with low energy electron microscopy and theoretically by calculating the electron reflectivity for realistic models of the NiO/Ni(111) surface with an ab-initio scattering…
Recently, lattice dynamics of the highly strained europium monoxide, as a promising candidate for strong ferroelectric-ferromagnet material, applied in the next-generation storage devices, attracted huge attention in the solid-state…
Strain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported…
The synthesis of the photochromic YHO films is based on the oxidation of deposited yttrium hydride in ambient conditions. The actual state of the films during the deposition process, which is influenced by the deposition pressure and the…
Ba(Fe1-xCox)2As2 superconducting thin films have been grown on SrTiO3, (La,Sr)(Al,Ta)O3, LaAlO3 and YAlO3 (YAO) single crystal substrates by pulsed laser deposition. All the films, except on YAO, have been grown epitaxially without buffer…
We have investigated structural, transport, and optical properties of tensile strained (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$ (x = 0, 0.025, 0.05) epitaxial thin-films. While High-T$_c$ superconductivity is predicted theoretically in the system,…
We report a simple technique for the synthesis of uniaxially textured, metastable hexagonal close-packed-like uranium thin films with thicknesses between 175-2800 \r{A}. The initial structure and texture of the layers have been studied via…
Crystal and domain structures of tensile-strained BiFeO3 films grown on orthorhombic (110)o PrScO3 substrates were investigated. All films possess a MB-type monoclinic structure with 109o stripe domains oriented along the [\=i10]o…
We describe the characterization of structural defects that occur during molecular beam epitaxy of topological insulator thin films on commonly used substrates. Twinned domains are ubiquitous but can be reduced by growth on smooth InP…
Graphene oxide (GO) is regarded as one typical two-dimension structured oxygenated planar molecular material. Researchers across multiple disciplines have paid enormous attention to it due to unique physiochemical properties. However,…