Related papers: Temperature and Electric Field Induced Metal-Insul…
Thin films of VO$_2$ on different substrates, Al$_2$O$_3$ and SiO$_2$/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase…
We use polarization- and temperature-dependent x-ray absorption spectroscopy, in combination with photoelectron microscopy, x-ray diffraction and electronic transport measurements, to study the driving force behind the insulator-metal…
Electrical and optical properties of amorphous vanadium oxide thin films obtained by electrochemical anodic oxidation are studied. It is shown that under cathodic polarization the hydrogen insertion into vanadium oxide from an electrolyte…
Vanadium dioxide (VO$_2$) undergoes a metal-insulator transition (MIT) at 340 K with the structural change between tetragonal and monoclinic crystals as the temperature is lowered. The conductivity $\sigma$ drops at MIT by four orders of…
We use apertureless scattering near-field optical microscopy (SNOM) to investigate the nanoscale optical response of vanadium dioxide (VO2) thin films through a temperature-induced insulator-to-metal transition (IMT). We compare images of…
A vanadium dioxide VO2 film shows metal-insulator transition (MIT) induced by changing environmental temperature. We report the temperature dependence of electromotive force properties generated in VO2/Ni80Fe20 bilayer junctions under the…
Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be…
The metal-insulator transition (MIT) in vanadium dioxide (VO2) has the potential to lead to a number of disruptive technologies, including ultra-fast data storage, optical switches, and transistors which move beyond the limitations of…
Vanadium dioxide (VO2) as a phase-change material controls the transferred heat during phase transition process between metal and insulator states. At temperature above 68C, the rutile structure VO2 keeps the heat out and increases the IR…
An electrical study of thin $VO_{2}$ films in the vicinity of the structural phase transition at $68^{0}C$ shows (a) that the electrical resistance $R$ follows $log (R)$ $\propto$ $-T$ over the $T$-range, $20 < T < 80 ^{0}C$ covering both…
Impedance spectroscopy measurements were performed in high quality Vanadium dioxide (VO2) thin films. This technique allows us investigate the resistive and capacitive contribution to the dielectric response near the metal-insulator…
Vanadium dioxide (VO2) undergoes a phase transition at a temperature of 340 K between an insulating monoclinic M1 phase and a conducting rutile phase. Accurate measurements of possible anisotropy of the electronic properties and phonon…
An abrupt metal-insulator transition (MIT) was observed in VO2 thin films during the application of a switching voltage pulse to two-terminal devices. Any switching pulse over a threshold voltage for the MIT of 7.1 V enabled the device…
In order to study the origin of metallization of VO$_2$ induced by electron injection, we deposit K atoms onto the surface of VO$_2$ films grown on TiO$_2$ (001) substrates, and we investigate the change in the electronic and crystal…
Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this…
We investigate optical forces on oscillating dipoles close to a phase-change vanadium dioxide (VO$_2$) film, which exhibits a metal-insulator transition around $340$ K and low thermal hysteresis. This configuration is related to one…
Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change.…
The optical/infrared properties of films of vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) have been investigated via ellipsometry and near-normal incidence reflectance measurements from far infrared to ultraviolet frequencies.…
We have grown VO2 thin films by laser ablation for electronic device applications. In obtaining the thin films of the pure VO2 phase, oxygen partial pressure is a critical parameter because vanadium oxides have several phases with the…
In this work, the results of fabricating ultra thin VO$_2$ films on the technologically relevant amorphous SiO$_2$ surface using reactive DC magnetron sputtering are presented. Results indicate that a post deposition anneal in low partial…