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The ability to control electronic states at the nanoscale has contributed to our modern understanding of condensed matter. In particular, quantum dot circuits represent model systems for the study of strong electronic correlations,…
We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin…
Nontrivial capacitance behavior, including a negative capacitance (NC) effect, observed in a variety of semiconductor devices, is discussed emphasizing the physical mechanism and the theoretical interpretation of experimental data. The…
Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge…
Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron…
Developing fast and accurate control and readout techniques is an important challenge in quantum information processing with semiconductor qubits. Here, we study the dynamics and the coherence properties of a GaAs/AlGaAs double quantum dot…
Isolated spins in semiconductors provide a promising platform to explore quantum mechanical coherence and develop engineered quantum systems. Silicon has attracted great interest as a host material for developing spin qubits because of its…
The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
We demonstrate the ability of an epitaxial semiconductor-superconductor nanowire to serve as a field-effect switch to tune a superconducting cavity. Two superconducting gatemon qubits are coupled to the cavity, which acts as a quantum bus.…
Particle-exchange machines utilize electronic transport to continuously transfer heat between fermionic reservoirs. Here, we couple a quantum mechanical resonator to a particle-exchange machine hosted in a quantum dot and let the system run…
The current work investigates the performance of dual-gate GaAs-nanowire FET as a charge-qubit device operating at room temperature. In compatibility with the state-of-the-art classical bit technology, it is shown that the single gate of a…
Quantum interference between one- and two-photon absorption pathways allows coherent control of interband transitions in unbiased bulk semiconductors; carrier population, carrier spin polarization, photocurrent injection, and spin current…
We have observed coherent time evolution between two quantum states of a superconducting flux qubit comprising three Josephson junctions in a loop. The superposition of the two states carrying opposite macroscopic persistent currents is…
Quantum emitters such as quantum dots, defects in diamond or in silicon have emerged as efficient single photon sources that are progressively exploited in quantum technologies. In 2019, it was shown that the emitted single photon states…
Addressability of spin qubits in a silicon double quantum dot setup in the (1,1) charge configuration relies on having a large difference between the Zeeman splittings of the electrons. When the difference is not sufficiently large, the…
We have investigated the realizability of the controlled-NOT (CNOT) gate and characterized the gate operation by quantum process tomography for a chain of qubits, realized by electrons confined in self-assembled quantum dots embedded in the…
With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…
We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass…
We investigate the zero-frequency shot noise of electronic tunneling through a single quantum dot (SQD) and coherently coupled quantum dots (CQD) taking into account the Coulomb interaction. Within Hartree-Fock approximation, the analytical…