Related papers: Gate-sensing coherent charge oscillations in a sil…
We study coherent charge tunneling through a one-dimensional interacting ring with a one-dimensional quantum dot embedded in one of its arms through bosonisation. The symmetries of the effective action explain many of the features such as…
An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF…
In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit…
Three-level quantum systems have formed a cornerstone of quantum optics since the discovery of coherent population trapping (CPT) and electromagnetically induced transparency. Key to these phenomena is quantum interference, which arises if…
We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array…
One of the biggest challenges impeding the progress of Metal-Oxide-Silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO$_2$ interface which interferes with controllably confining single and few electrons. In this work…
We evaluate the charge noise acting on a GaAs/GaAlAs based semiconductor double quantum dot dipole-coupled to the voltage oscillations of a superconducting transmission line resonator. The in-phase ($I$) and the quadrature ($Q$) components…
We present transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact. Zero-bias features in tunneling spectroscopy appear at finite magnetic fields, and oscillate in amplitude and…
We present a study on inelastic thermoelectric devices, wherein charge currents and electronic and phononic heat currents are intricately interconnected. The employment of double quantum dots in conjunction with a phonon bath positions them…
The quantum efficiency, which characterizes the quality of information gain against information loss, is an important figure of merit for any realistic quantum detectors in the gradual process of collapsing the state being measured. In this…
Utilizing dispersive gate sensing (DGS), we investigate the spin-orbit field ($\textbf{B}_{SO}$) orientation in a many-electron double quantum dot (DQD) defined in an InSb nanowire. While characterizing the inter-dot tunnel couplings, the…
We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET).…
For $\cos(2\theta)$ qubits based on voltage-controlled semiconductor nanowire Josephson junctions we introduce a single-qubit $Z$ gate inspired by the noise-bias preserving gate of the Kerr-cat qubit. This scheme relies on a $\pi$ rotation…
Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 20-band sp3d5s* spin-orbit-coupled (SO) atomistic tight-binding model coupled to…
We study intrinsic noise of current in a superconducting single-electron transistor, taking into account both coherence effects and Coulomb interaction near a Cooper-pair resonance. Due to this interplay, the statistics of tunneling events…
We study the surface conductivity of a field-effect transistor (FET) made of periodic array of spherical semiconductor nanocrystals (NCs). We show that electrons introduced to NCs by the gate voltage occupy one or two layers of the array.…
Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the ``metallic cylinder on an infinite metal plate…
Quantum magneto-oscillations have long been a vital subject in condensed matter physics, with ubiquitous quantum phenomena and diverse underlying physical mechanisms. Here, we demonstrate the intrinsic and reproducible DC-current-driven…
Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…
We employ the time-dependent non-crossing approximation to investigate the joint effect of strong electron-electron and electron-phonon interaction on the instantaneous conductance of a single molecule transistor which is abruply moved into…