Related papers: Gate-sensing coherent charge oscillations in a sil…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will…
Dispersive sensing is a powerful technique that enables scalable and high-fidelity readout of solid-state quantum bits. In particular, gate-based dispersive sensing has been proposed as the readout mechanism for future topological qubits,…
We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a…
The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in…
Universal quantum computation requires high fidelity single qubit rotations and controlled two qubit gates. Along with high fidelity single qubit gates, strong efforts have been made in developing robust two qubit logic gates in…
Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties…
We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation…
Recent experiments have demonstrated superconducting transmon qubits with semiconductor nanowire Josephson junctions. These hybrid gatemon qubits utilize field effect tunability characteristic for semiconductors to allow complete qubit…
We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the…
Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to…
Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon…
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon…
Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for…
In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio-frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots, but comes at the…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…
Spin qubits in germanium are a promising contender for scalable quantum computers. Reading out of the spin and charge configuration of quantum dots formed in Ge/Si core/shell nanowires is typically performed by measuring the current through…
The implementation of quantum technologies in electronics leads naturally to the concept of coherent single-electron circuits, in which a single charge is used coherently to provide enhanced performance. In this work, we propose a coherent…
We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an…
The coherent dynamics of a quantum mechanical two-level system passing through an anti-crossing of two energy levels can give rise to Landau-Zener-St\"uckelberg-Majorana (LZSM) interference. LZSM interference spectroscopy has proven to be a…