Related papers: Weak Localization in Few-Layer Black Phosphorus
Combining scattering matrix formalism with non-linear $\sigma$-model technique we analyze weak localization effects in arrays of chaotic quantum dots connected via barriers with arbitrary distribution of channel transmissions. With the aid…
We study the transport properties of a long non-uniform quantum wire where the electron-electron interactions and the density vary smoothly at large length scales. We show that these inhomogeneities lead to a finite resistivity of the wire,…
We present temperature-dependent magneto-transport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations $s$ responsible for the formation of electron-hole puddles. The experimental…
Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be…
We report the anisotropic magneto-transport measurement on a non-compound band semiconductor black phosphorus (BP) with magnetic field B up to 16 Tesla applied in both perpendicular and parallel to electric current I under hydrostatic…
We report a study of the structural phase transitions induced by pressure in bulk black phosphorus by using both synchrotron x-ray diffraction for pressures up to 12.2 GPa and Raman spectroscopy up to 18.2 GPa. Very recently black…
We demonstrate a layer- and time-resolved measurement of ferromagnetic resonance (FMR) in a Ni81Fe19 / Cu / Co93Zr7 trilayer structure. Time-resolved x-ray magnetic circular dichroism has been developed in transmission, with resonant field…
We report a polarised neutron study of the magnetic structures and phase trasitions in \gdc\ in low magnetic fields. These experiments have been complemented by integrated intensity measurements with unpolarised neutrons in zero field.…
A 75 nm-thick Fe0.5Pt0.5 film is a ferromagnetic metal showing striped magnetic domains in remanence at room temperature. The magnetoresistance is characterized by varying the external temperature and the in-plane magnetic field intensity,…
Conduction electrons in disordered metals and heavily doped semiconductors at low temperatures preserve their phase coherence for a long time: phase relaxation time $\tau_\phi$ can be orders of magnitude longer than the momentum relaxation…
Using the tight-binding model, we investigate the influence of vacancy disorder on electrical transport in graphene Hall bars in the presence of quantizing magnetic fields. Disorder, induced by a random distribution of monovacancies, breaks…
A random-matrix theory is presented which shows that breaking time-reversal symmetry by itself does {\em not} suppress the weak-localization correction to the conductance of a disordered metal wire attached to a superconductor. Suppression…
We report, an experimental evidence of surface states (SS) driven magneto-transport in a Bi0.85Sb0.15 single crystal. Detailed high field (up to 12T) and low temperature (down to 2K) magneto-transport measurements are been carried out on…
We report the study of quasi-ballistic electron transport in short FETs subjected to magnetic field. Spatial distributions of electron concentrations, velocities, Hall currents and voltages in the short FET channels are determined. The…
Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero…
Using hybrid density functional theory combined with a semiempirical van der Waals dispersion correction, we have investigated the structural and electronic properties of vacancies and self-interstitials in defective few-layer phosphorene.…
In the presence of the charged impurities, we study the weak localization (WL) effect by evaluating the quantum interference correction (QIC) to the conductivity of Dirac fermions in graphene. With the inelastic scattering rate due to…
We investigate the electronic properties of $N$-layer black phosphorus by means of an analytical method based on a recently proposed tight-binding Hamiltonian involving $14$ hopping parameters. The method provides simple and accurate…
In this work, we study electrical conductivity and Hall conductivity in the presence of electromagnetic field using Relativistic Boltzmann Transport Equation with Relaxation Time Approximation. We evaluate these transport coefficients for a…
Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2…