Related papers: Characterization of Zero-Bias Microwave Diode Powe…
Microwave detectors based on the spin-transfer torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance…
We developed a tunnel diode oscillator and characterized its performance, highlighting its potential applications in the quantum state readout of electrons in semiconductors and electrons on liquid helium. This cryogenic microwave source…
Electric field noise from fluctuating patch potentials is a significant problem for a broad range of precision experiments, including trapped ion quantum computation and single spin detection. Recent results demonstrated strong suppression…
We report on the temperature dependence of the low-frequency electronic noise in NiO$_x$/Ga$_2$O$_3$ p-n heterojunction diodes. The noise spectral density is of the 1/f-type near room temperature but shows signatures of Lorentzian…
We introduce a microwave bolometer aimed at high-quantum-efficiency detection of wave packet energy within the framework of circuit quantum electrodynamics, the ultimate goal being single microwave photon detection. We measure the…
We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current and temperature. The as-grown and regrown diodes, with and without surface treatment have been studied. The noise…
We present a cryogenic microwave noise source with a characteristic impedance of 50 $\Omega$, which can be installed in a coaxial line of a cryostat. The bath temperature of the noise source is continuously variable between 0.1 K and 5 K…
We describe the construction and operation of a two-channel noise detection system for measuring power and cross spectral densities of current fluctuations near 2 MHz in electronic devices at low temperatures. The system employs cryogenic…
We introduce a zero-bias superconducting voltage amplifier that harvests energy from a thermal gradient by exploiting negative differential resistance (NDR) in an asymmetric tunnel junction. The device is based on an asymmetric…
A tabletop low-noise differential amplifer with a bandwidth of 100 kHz is presented. Low voltage drifts of the order of 100 nV/day are reached by thermally stabilizing relevant amplifer components. The input leakage current is below 100 fA.…
The electric noise can be an important limitation for applications of conducting elements of size in the nanometer range. The intrinsic electrical noise of prospective materials for opto-spintronics applications like ZnO has not been…
The microwave signal at the output of a photodiode that detects a modulated optical beam contains the phase noise phi(t) and the amplitude noise alpha(t) of the detector. Beside the white noise, which is well understood, the spectral…
A wide variety of applications of microwave cavities, such as measurement and control of superconducting qubits, magnonic resonators, and phase noise filters, would be well served by having a highly tunable microwave resonance. Often this…
The quantum bits (qubits) on which superconducting quantum computers are based have energy scales corresponding to photons with GHz frequencies. The energy of photons in the gigahertz domain is too low to allow transmission through the…
We develop Johnson noise thermometry applicable to mesoscopic devices with variable source impedance with high bandwidth for fast data acquisition. By implementing differential noise measurement and two-stage impedance matching, we…
This paper presents an analytical model to quantify the measured noise in a cryogenic bolometer readout circuit. The model includes the contributions from the bias resistors and sensor resistors, voltage and current noise of amplifier, and…
To reduce the level of thermally generated electrical noise transmitted to superconducting quantum devices operating at 20 mK, we have developed thin-film microwave power attenuators operating from 1 to 10 GHz. The 20 dB and 30 dB…
A single electron transistor based on Al-AlO_x-Nb tunnel junctions was fabricated by shadow evaporation and in situ barrier formation. Its output current noise was measured, using a transimpedance amplifier setup, as a function of bias…
The performance of a Si PIN diode (type Hamamatsu S3590-06) as an energy sen- sitive detector operating at cryogenic temperatures (~10 K) and in magnetic fields up to 11 T was investigated, using a 207Bi conversion electron source. It was…
We present ultra-thin silicon membrane thermocouple bolometers suitable for fast and sensitive detection of low levels of thermal power and infrared radiation at room temperature. The devices are based on 40 nm-thick strain tuned single…