Related papers: Numerical simulation of InGaN Schottky solar cell
III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium gallium nitride light emitting diodes have been successfully produced…
The Cu2ZnSn(S, Se)4 (CZTSSe) emerging inorganic solar cell is highly promising for accelerating the large-scale and low-cost applications of thin-film photovoltaics. It possesses distinct advantages such as abundant and non-toxic…
Carbon materials are excellent candidates for photovoltaic solar cells: they are Earth-abundant, possess high optical absorption, and superior thermal and photostability. Here we report on solar cells with active layers made solely of…
Thin-film solar cells with CuIn$_x$Ga$_{1-x}$Se$_2$ (CIGS) absorber are still far below their efficiency limit, although lab cells reach already 19.9%. One important aspect is the homogeneity of the alloy. Large-scale simulations combining…
Silicon photonics has many attractive features but faces a major issue: inefficient and slow photodetection in the telecom range. New metal-semiconductor Schottky photodetectors based on intraband absorption address this problem, but their…
A high photon to electricity conversion efficiency of 47.2082% was achieved by a novel combination of In0.51Ga0.49P, GaAs, In0.24Ga0.76As and In0.19Ga0.81Sb subcell layers in a quadruple junction solar cell design. The electronic bandgap of…
White light emitting diodes based on III-nitride InGaN/GaN quantum wells currently offer the highest overall efficiency for solid state lighting applications. Although current phosphor-converted white LEDs have high electricity-to-light…
Thermal annealing is one of most effective way to improve the efficiency of graphene/n-Si Schottky junction solar cell. Here, its underlying mechanism has been investigated by comparative studies in terms of the removal of polymethyl…
Nitrogen is an important element in various fields of stellar and Galactic astronomy, and the solar nitrogen abundance is crucial as a yardstick for comparing different objects in the cosmos. In order to obtain a precise and accurate value…
Silicon solar cells dominate the solar cell market with record lab efficiencies reaching almost 26%. However, after 60 years of research, this efficiency saturated close to the theoretical limit for silicon, and radically new approaches are…
We used AlGaSb/AlGaAs material system for a theoretical study of photovoltaic performance of the proposed GaAs-based solar cell in which the type-II quantum dot (QDs) absorber is spatially separated from the depletion region. Due to…
A graphene layer on top of a dielectric can dramatically influence ability of the material to radiative heat transfer. This property of graphene is used to improve the performance and reduce costs of near-field thermophotovoltaic cells.…
A design tool was formulated for optimizing the efficiency of inorganic, thin-film, photovoltaic solar cells. The solar cell can have multiple semiconductor layers in addition to antireflection coatings, passivation layers, and buffer…
With the usage of two transparent electrodes, organic solar cells are semitransparent and may be combined to parallel-connected multi-junction devices or used for innovative applications like power-generating windows. A challenging issue is…
In this article a concept is introduced, which allows for reduced Coulomb interaction in organic solar cells and as such for enhanced power conversion efficiencies. The concept is based on the introduction of electrically insulating,…
The gallium anomaly has a global significance of greater than $5\sigma$. Most viable BSM solutions quickly run into strong tensions with reactor and solar neutrino data. We propose to use indium (${}^{115}\text{In}$) as a target as it…
ZnSnN2 is an Earth-abundant analog to the III-Nitrides with potential as a solar absorber due to its direct bandgap, steep absorption onset, and disorder-driven bandgap tunability. Despite these desirable properties, discrepancies in the…
This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics…
We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+$GW$ formalism. We find that $(\text{Sn}_\text{Zn})$ and $(\text{Ge}_\text{Zn})$ introduce isolated…
Gallium nitride (GaN) is a wide-bandgap semiconductor of significant interest for applications in solid-state lighting, power electronics, and radio-frequency amplifiers. An important limitation of this semiconductor is its low intrinsic…