Related papers: Single Quantum Level Electron Turnstile
We realize a superconductor-coupled quantum dot (QD) in an InSb nanosheet, a 2D platform promising for studies of topological superconductivity. The device consists of a superconductor-QD-superconductor junction, where a bottom bilayer gate…
We designed and experimentally demonstrated a four-terminal superconducting device which can function as a non-latching (reversible) superconducting switch from the diode regime to the resistive state by applying a control current much…
We present an experimental study of hybrid turnstiles with high charging energies in comparison to the superconducting gap. The device is modeled with the sequential tunneling approximation. The backtunneling effect is shown to limit the…
We develop a microscopic theory of single-electron transport in N-S-N hybrid structures in the presence of applied magnetic field introducing vortex lines in a superconductor layer. We show that vortex cores in a thick and clean…
Semiconductor-based quantum dot single-electron pumps are currently the most promising candidates for the direct realization of the emerging quantum standard of the ampere in the International System of Units. Here, we discuss a silicon…
We study the quantization of the supercurrent and conductance of a superconducting quantum point contact (SQPC) in a superconductor-two dimensional electrongas-superconductor (S-2DEG-S) Josephson junction with a split gate. The supercurrent…
We perform in-situ detection of individual electrons pumped through a single-electron turnstile based on ultrasmall normal metal - insulator - superconductor tunnel junctions. In our setup, limited by the detector bandwidth, at low…
Hybrid turnstiles have proven to generate accurate single-electron currents. The usual operation consists of applying a periodic modulation to a capacitively coupled gate electrode and requires a non-zero DC source-drain bias voltage. Under…
We study electron transmission through a periodic array of quantum dots (QD) sandwiched between doped semiconductor leads. When the Fermi wavelength of tunneling electron exceeds the array lattice constant, the off-resonant per QD…
In this Letter, we present a theoretical analysis to single-electron pumping operation in a large range of driving frequencies through the time-dependent tunneling barriers controlled by external gate voltages. We show that the…
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double…
The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mathrm{\mu}$m and is…
We describe in detail a set of ideas for implementing qubits, quantum gates and quantum gate networks in a semiconductor heterostructure device. Our proposal is based on an extension of the technology used for surface acoustic wave (SAW)…
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…
Electronic transport through nanostructures is greatly affected by the presence of superconducting leads. If the interface between the nanostructure and the superconductors is sufficiently transparent, a dissipationless current…
We report a numerical study of transport properties of a quantum dot with superconducting leads. We introduce a general phenomenological model of quantum dot transport, in which electron tunnel rates are computed within the Fermi's Golden…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
We analyze the transport properties of a double quantum dot device in the side-coupled configuration. A small quantum dot (QD), having a single relevant electronic level, is coupled to source and drain electrodes. A larger QD, whose…
We study transport through strongly interacting quantum dots with $N$ energy levels that are weakly coupled to generic multi-channel metallic leads. In the regime of coherent sequential tunneling, where level spacing and broadening are of…
We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending…