Related papers: The relation between optical instabilities and abs…
The photoluminescence of III-V wide band-gap semiconductors as InGaN is characterized by local intensity fluctuations, known as 'blinking points', that despite decades of research are not yet completely understood. In this letter we report…
A model including random alloy disorder is used to account for the outstanding optical properties of InGaN quantum wells (QW). The model provides excellent agreement to experimental observations on various structures. This study clarifies…
Photon correlation measurements reveal memory effects in the optical emission of single InAs quantum dots with timescales from 10 to 800 ns. With above-band optical excitation, a long-timescale negative correlation (antibunching) is…
A general approach to the analysis of optical properties of photonic crystals based on multiple-quantum-well structures is developed. The effect of the polarization state and a non-perpendicular incidence of the electromagnetic wave is…
We discuss theoretically the light-matter coupling in a microcavity containing a quantum well with a two-dimensional electron gas. The high density limit where the bound exciton states are absent is considered. The matrix element of…
Solid state single photon emitters (SPEs) are one of the prime components of many quantum nanophotonics devices. In this work, we report on an unusual, photo-induced blinking phenomenon of SPEs in gallium nitride (GaN). This is shown to be…
We investigate the influence of oxygen annealing on the room temperature optical and scintillation properties of CaWO$_4$ single crystals that are being produced for direct Dark Matter search experiments. The applied annealing procedure…
The photocurrent and the small-signal photoconductance of InGaN/GaN multiple-quantum-well structures were studied at the temperature range from 10 to 300 K. The optical excitation was carried out at the quantum wells intrinsic absorption…
Single cesium lead bromide (CsPbBr3) nanocrystals show strong photoluminescence blinking, with on- and off- dwelling times following power-law distributions. We investigate the memory effect in the photoluminescence blinking of single…
In this work the broadening of interband transitions in InGaN/GaN quantum wells (QWs) resulting from structural inhomogeneities is analyzed. The role of polarization-induced electric field in the mechanism behind the inhomogeneous…
We point out a novel manifestation of many-body correlations in the linear optical response of electrons confined in a quantum well. Namely, we demonstrate that along with conventional absorption peak at frequency close to intersubband…
InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and…
We report on recent experiments investigating the modification of the inter-band optical response of a piezoelectric semiconductor quantum well structure under the influence of intense short period surface acoustic waves. Experimentally, we…
We study the optical response of a binary system of identical atoms in which one of them is excited by an incoherent pump. %We study the properties of photon scattering, absorption and emission, together with the time evolution of the…
Arrays of atoms trapped in optical lattices are appealing as storage media for photons, since motional dephasing of the atoms is eliminated. The regular lattice is also associated with band structure in the dispersion experienced by…
In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally…
We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) technique. Multiple mechanisms related to efficiency loss are independently examined,…
We report on photoluminescence (PL) measurements at 85 K for GaN/AlGaN surface quantum wells (SQW's) with a width in the range of 1.51-2.9 nm. The PL spectra show a redshift with decreasing SQW width, in contrast to the blueshift normally…
We present a theory for the diffraction of large molecules or nanoparticles at a standing light wave. Such particles can act as a genuine photon absorbers due to their numerous internal degrees of freedom effecting fast internal energy…
The electronic structure and optical response of electrically gated bilayer graphene are studied by first-principles approaches. We have obtained the induced band gap that is in good agreement with experiment when the applied electric field…