Related papers: Structured Back Gates for High-Mobility Two-Dimens…
Moving trapped-ion qubits in a microstructured array of radiofrequency traps offers a route towards realizing scalable quantum processing nodes. Establishing such nodes, providing sufficient functionality to represent a building block for…
We have introduced here a simple, single step and cost effective broad ion beam technique for preparation of nanoscale electronic, magnetic, optical and mechanical devices without the need of resist, mask, or focused electron and ion beams.…
The low-energy band structure of few-layer MoS$_2$ is relevant for a large variety of experiments ranging from optics to electronic transport. Its characterization remains challenging due to complex multi band behavior. We investigate the…
We use Scanning Gate Microscopy to study electron transport through an open, gate-defined resonator in a Ga(Al)As heterostructure. Raster-scanning the voltage-biased metallic tip above the resonator, we observe distinct conductance…
The nature of a metal--insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions at integer bulk filling, as reported in recent experiments of Roddaro et al. [1], is addressed. We are particularly…
In Bi$_2$Te$_2$Se, the period of quantum oscillations arising from surface Dirac fermions can be increased 6-fold using ionic liquid gating. At large gate voltages, the Fermi energy reaches the $N$ = 1 Landau level in a 14-Tesla field. This…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
We replace the established aluminium gates for the formation of quantum dots in silicon with gates made from palladium. We study the morphology of both aluminium and palladium gates with transmission electron microscopy. The native…
Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical transport characteristics of graphene channel. We explore…
Ballistic, gate-defined devices in two-dimensional materials offer a platform for electron optics phenomena influenced by the material's properties and gate control. We study the ray trajectory dynamics of all-electronic, gate-defined…
We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6 $\times 10^{13}/cm^{2}$ are consistently reached, significantly higher than with conventional back-gating. The mobility…
The low-temperature conductivity of low-density, high-mobility, two-dimensional hole systems in GaAs was studied. We explicitly show that the metal-insulator transition, observed in these systems, is characterized by a well-defined critical…
Due to the need for higher reliability and performance from RF circuits, multi-port reflectometers are increasingly used as low-overhead impedance monitors. In this work, using periodic structures as multi-ports is proposed. Periodic…
We have fabricated ambipolar transistors on chemically prepared hydrogen-terminated Si(111) surfaces, in which a two-dimensional electron system (2DES) or a two-dimensional hole system (2DHS) can be populated in the same conduction channel…
Absence of an efficient technology of GaAs passivation limits the use of III-V semiconductors in modern electronics. The effect reported here can possibly lead to a solution of this long standing problem. We found that an electrically…
We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where…
We studied the influence of oxygen on the electronic trap states in a pentacene thin film. This was done by carrying out gated four-terminal measurements on thin-film transistors as a function of temperature and without ever exposing the…
We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic insulator/metal interfaces. The experiment is done for alkane/Cu(001) with an element-selective near edge…
We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double…
Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material.…