Related papers: Valley detection using a graphene gradual pn junct…
We describe a nonlinear interaction between charge currents and spin currents which arises from the energy dependence of the conductivity. This allows nonmagnetic contacts to be used for measuring and controlling spin signals. We choose…
Narrowing the performance gap between optimal and feasible detection in inter-symbol interference (ISI) channels, this paper proposes to use graph neural networks (GNNs) for detection that can also be used to perform joint detection and…
Graphene devices require electric contacts with metals, particularly with gold. Scanning tunneling spectroscopy studies of electron local density of states performed on mono-, bi- and tri- graphene layer deposited on metallic conductive…
The spatial convolution layer which is widely used in the Graph Neural Networks (GNNs) aggregates the feature vector of each node with the feature vectors of its neighboring nodes. The GNN is not aware of the locations of the nodes in the…
Graphene p-n junctions provide an ideal platform for investigating novel behavior at the boundary between electronics and optics that arise from massless Dirac fermions, such as whispering gallery modes and Veselago lensing. Bilayer…
We predict the coexistence of tunneling spin and valley Hall effects when electrons in graphene coherently transmit through a barrier with the broken inversion symmetry and proximity-induced spin-orbit coupling. Due to the rotation of the…
Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less…
It is shown that potential barriers in bilayer graphene (BLG) and monolayer transition metal dichalcogenides (TMDs) can split a valley unpolarized incident current into reflected and transmitted currents with opposite valley polarization.…
The discovery of Mott insulators and superconductivity in twisted bilayer graphene has ignited intensive research into strong correlation effects in other stacking geometries. Bernal-stacked bilayer graphene (BBG), when subjected to a…
The electronic density of states of graphene is equivalent to that of relativistic electrons. In the absence of disorder or external doping the Fermi energy lies at the Dirac point where the density of states vanishes. Although transport…
The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized…
We report a study of one-dimensional subband splitting in a bilayer graphene quantum point contact in which quantized conductance in steps of $4\,e^2/h$ is clearly defined down to the lowest subband. While our source-drain bias spectroscopy…
Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top gate electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and…
Creation of sharp lateral p-n junctions in graphene devices, with transition widths well below the Fermi wavelength of graphene charge carriers, is vital to study and exploit these electronic systems for electron-optical applications. The…
We show that introducing spin-singlet or spin-triplet superconductivity into twisted bilayer graphene induces higher-order topological superconductivity. $C_{2z}T$-protected corner states of Majorana Kramers pairs appear at the boundary…
We develop a theory for graphene magnetotransport in the presence of carrier spin polarization as induced, for example, by the application of an in-plane magnetic field ($B$) parallel to the 2D graphene layer. We predict a negative…
We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied perpendicular electric field, with an On/Off ratio up to…
It has been shown in a recent study [Nguyen et al., Nanotechnol. \textbf{25}, 165201 (2014)] that unstrained/strained graphene junctions are promising candidates to improve the performance of graphene transistors that is usually hindered by…
Recent years have witnessed a great interest in orbital related electronics (also termed as orbitronics). In the current work, we present a first-principles density functional theory calculation on the orbital magnetic moments, intrinsic…
Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to…