Related papers: Crystal-phase quantum dots in GaN quantum wires
We have performed near-field spectroscopy and microscopy of the InAs/AlGaAs quantum-dot-based nanoclusters. It is observed that the photoluminescence spectra of spatially confined excitons in the nanoclusters is blue-shifted up to 20 meV as…
The occurrence of several crystal phases within nanostructures of a single material presents both challenges and opportunities. While unintended phase mixing can degrade optoelectronic performances, deliberate control of polytypism enables…
We study the band structure of semiconductor nanowires with quantum dots embedded in them. The band structure is calculated using the Rayleigh-Ritz variational method. We consider quantum dots of two different types, one type is defined by…
We have measured the electric transport properties of TiN nanostrips with different widths. At zero magnetic field the temperature dependent resistance R(T) saturates at a finite resistance towards low temperatures, which results from…
We study spatially indirect excitons of GaAs quantum wells, confined in a 10 microns electrostatic trap. Below a critical temperature of about 1 Kelvin, we detect macroscopic spatial coherence and quantised vortices in the weak…
Excitons are bound electron-hole pairs that dominate the optical response of semiconductors and insulators, especially in materials where the Coulomb interaction is weakly screened. Light absorption (including excitonic effects) has been…
Recent advances in nanowire synthesis have enabled the realization of crystal phases that in bulk are attainable only under extreme conditions, i.e. high temperature and/or high pressure. For group IV semiconductors this means access to…
The photoluminescence spectra of spherical CdTe nanocrystals with zincblende structure are studied by size-selective spectroscopic techniques. We observe a resonant Stokes shift of 15 meV when the excitation laser energy is tuned to the red…
We report on strongly temperature-dependent kinetics of negatively charged carrier complexes in asymmetric InAs/AlGaInAs/InP quantum dots (dashes) emitting at telecom wavelengths. The structures are highly elongated and of large volume,…
In this Letter, we report the observation of electroluminescence (EL) at around 866 nm from n-i-n unipolar (electron-transporting) III-V GaAs nanoLEDs. The devices consist of nanopillars with top diameter of 166 nm, arranged in a 10x10…
Continuous Nb wires, 7-15 nm in diameter, have been fabricated by sputter-coating single fluorinated carbon nanotubes. Transmission electron microscopy revealed that the wires are polycrystalline, having grain sizes of about 5 nm. The…
Excitons, the bosonic quasiparticle emerging from Coulomb interaction between electrons and holes, will undergo a Bose-Einstein condensation(BEC) and transition into a superfluid state with global phase coherence at low temperatures. An…
We cooled ultrathin tapered fibers to cryogenic temperatures and controllably coupled them with high-Q microsphere resonators at a wavelength close to the optical transition of diamond nitrogen vacancy centers. The 310-nm-diameter tapered…
Bilayer graphene is a nanomaterial that allows for well-defined, separated quantum states to be defined by electrostatic gating and, therefore, provides an attractive platform to construct tunable quantum dots. When a magnetic field…
We investigate exciton confinement to a quantum wire in monolayer $\text{MoSe}_2$ where the confinement is achieved by a p-i-n junction. We employ an effective-mass exciton model and solve the problem numerically, reflecting device…
Understanding the optical emission characteristics of semiconductor nanostructures is important when determing their device applicability. The emission depends on the material and its geometry, but also depends on other processes such as…
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential for applications as light absorbers and emitters, it is…
We study dipolar excitons confined at 330 mK in a square electrostatic lattice of a GaAs double quantum well. In the dipolar occupation blockade regime, at 3/2 filling, we evidence that excitons form a face-centred superlattice quantum…
We refine excitonic parameters of bulk GaN by means of time-of-flight spectroscopy of light pulses propagating through crystals. The influence of elastic photon scattering is excluded by using the multiple reflections of the pulses from…
Electrical transport measurements were made on single-crystal Sn nanowires to understand the intrinsic dissipation mechanisms of a one-dimensional superconductor. While the resistance of wires of diameter larger than 70 nm drops…