Related papers: Fast atom diffraction inside a molecular beam epit…
Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001)substrates. In situ reflection high energy electron diffraction was used to quantitatively determine the Ga coverage of the GaN surface during growth.…
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology, tunable band structure, and potential for a direct bandgap…
Structural and optical properties of MBE-grown GaAs(001) surface have been studied by reflection high-energy electron diffraction and single-wavelength ellipsometry under dynamic conditions of ramp heating after desorption of passivating…
We introduce bidirectional edge diffraction response function (BEDRF), a new approach to model wave diffraction around edges with path tracing. The diffraction part of the wave is expressed as an integration on path space, and the wave-edge…
The direct growth of III-V semiconductors on silicon holds tremendous potential for photonics applications. However, the inherent differences in their properties lead to defects in the epitaxial layer, including threading dislocations…
We study the effects of strong inter-particle interaction on diffraction of a Bose-Einstein condensate of $^6Li_2$ molecules from a periodic potential created by pulses of a far detuned optical standing wave. For short pulses we observe the…
Self-assembled InAs/GaAs quantum dots (QDs) have properties highly valuable for developing various optoelectronic devices such as QD lasers and single photon sources. The applications strongly rely on the density and quality of these dots,…
Two-dimensional materials with layered structures, appropriate bandgap, and high carrier mobilities have gathered tremendous interests due to their potential applications in optoelectronic and photovoltaic devices. Here, we report the…
The growth of high-composition GeSn films of the future will likely be guided via algorithms. In this study we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16 % on GaAs (001) substrates…
NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth with a cube-on-cube epitaxial relationship was confirmed by…
Diffusion of Ga adatom at the As rich, low temperature c(4$\times$4) reconstructions of GaAs(001) surface is analyzed. We use known energy landscape for the motion of Ga adatom at two different $\alpha$ and $\beta$ surface phases to…
We present an experimental investigation of the magnetic, electrical and structural properties of Ga0.94Mn0.06As1-yPy layers grown by molecular beam epitaxy on GaAs substrates for y less than or equal to 0.3. X-ray diffraction measurements…
Infrared spectroscopy currently requires the use of bulky, expensive, and/or fragile spectrometers. For gas sensing, environmental monitoring, or other applications in the field, an inexpensive, compact, robust on-chip spectrometer is…
Co2FeSi/GaAs(110) and Co2FeSi/GaAs(-1-1-1)B hybrid structures were grown by molecular-beam epitaxy (MBE) and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The films contain inhomogeneous distributions…
Grain boundary (GB) diffusion in polycrystalline materials is a physical phenomenon of great fundamental interest and practical significance. Although the accelerated ("short circuit") atomic transport along GBs has been known for decades,…
Recently the Li-Beam Emission Spectroscopy (Li-BES) system on COMPASS has reached its full diagnostic power in terms of routine automatic operation in any kind of plasma scenarios and it is normally used as a standard tool for…
When subjected to monochromatic incident light a nanoparticle will emit light which then interferes with the incident beam. With sufficient contrast and sufficiently close to the particle this interference pattern may be recorded with a…
The specular reflectivity of slow, metastable neon atoms from a silicon surface was found to increase markedly when the flat surface was replaced by a grating structure with parallel narrow ridges. For a surface with ridges that have a…
Using atomic force microscopy, we have studied the surface structures of high quality molecular beam epitaxy grown (Ga,Mn)As compound. Several samples with different thickness and Mn concentration, as well as a few (Ga,Mn)(As,P) samples…
The numerical analysis of the diffraction features rendered by transmission electron microscopy (TEM) typically relies either on classical approximations (Monte Carlo simulations) or quantum paraxial tomography (the multislice method and…