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The Josephson diode effect (JDE), a nonreciprocal supercurrent, is a cornerstone for future dissipationless electronics, yet achieving high efficiency in a simple device architecture remains a significant challenge. Here, we theoretically…
In this paper, we propose a new Extended-p+ Stepped Gate (ESG) thin film SOI LDMOS with an extended-p+ region beneath the source and a stepped gate structure in the drift region of the LDMOS. The hole current generated due to impact…
Inhomogeneously doped thermoelectric nanomaterials with a delta-function electronic density of states can operate with Carnot efficiency in the absence of phonon heat leaks. Here we self-consistently calculate the efficiency and power from…
Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here,…
Vertical field effect transistors (VFETs) show many advantages such as high switching speed, low operating voltage, low power consumption, and miniaturization over lateral FETs. However, VFET still faces the main challenges of high…
Precise and ultrafast control of electronic band structures is a central challenge for advancing quantum functional materials and devices. Conventional approaches--such as chemical doping, lattice strain, or external gating--offer robust…
We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer…
In this work, we review and expand recent theoretical proposals for the realization of electronic thermal diodes based on tunnel-junctions of normal metal and superconducting thin films. Starting from the basic rectifying properties of a…
Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic…
HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching capability together with the low on-current density suggests…
We propose a semiconductor-superconductor hybrid device for realizing topological superconductivity and Majorana zero modes consisting of a planar Josephson junction structure with periodically modulated junction width. By performing a…
Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as…
Josephson junction field-effect transistors (JJFETs) have recently re-emerged as promising candidates for superconducting computing. For JJFETs to perform Boolean logic operations, the so-called gain factor $\alpha_{R}$ must be larger than…
Hydrogen (H) plays a key role in the near-to-room temperature superconductivity of hydrides at megabar pressures. This suggests that H doping could have similar effects on the electronic and phononic spectra of materials at ambient pressure…
Excellent gate electrostatics in field effect transistors (FETs) based on two-dimensional transition metal dichalcogenide (2D TMD) channels can dramatically decrease static power dissipation. Energy efficient FETs operate in enhancement…
In this work, the source structure of an n-type thin-film tunneling FET is engineered to get better performance. An ultra-thin SiGe along with Si is used in the source of silicon-based TFET. Two structures are compared with conventional…
Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ~6V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of…
Steep transistors are crucial in lowering power consumption of the integrated circuits. However, the difficulties in achieving steepness beyond the Boltzmann limit experimentally have hindered the fundamental challenges in application of…
We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility…
In this paper, we report a novel chemical doping technique to reduce the contact resistance (Rc) of transition metal dichalcogenides (TMDs) - eliminating two major roadblocks (namely, doping and high Rc) towards demonstration of…