Edge dependent Josephson Diode effect in WTe$_{2}$-Based Josephson junction
Abstract
The Josephson diode effect (JDE), a nonreciprocal supercurrent, is a cornerstone for future dissipationless electronics, yet achieving high efficiency in a simple device architecture remains a significant challenge. Here, we theoretically investigate the JDE in a junction based on monolayer 1T'-WTe. We first establish that different edge terminations of a WTe nanoribbon lead to diverse electronic band structures, some of which host asymmetric edge states even with crystallographically equivalent terminations. This intrinsic asymmetry provides a natural platform for realizing the JDE. With a WTe-based Josephson junction, we demonstrate a significant JDE arising purely from these asymmetric edges when time-reversal symmetry is broken by a magnetic flux. While the efficiency of this edge-state-driven JDE is inherently limited, we discover a crucial mechanism for its enhancement: by tuning the chemical potential into the bulk bands, the interplay between edge and bulk transport channels boosts the maximum diode efficiency more than . Furthermore, we show that this enhanced JDE is robust against moderate edge disorder. Our findings not only propose a novel route to achieve a highly efficient JDE using intrinsic material properties but also highlight the potential of engineered WTe systems for developing advanced superconducting quantum devices.
Keywords
Cite
@article{arxiv.2508.21357,
title = {Edge dependent Josephson Diode effect in WTe$_{2}$-Based Josephson junction},
author = {Guo-Liang Guo and Xiao-Hong Pan and Hao Dong and Xin Liu},
journal= {arXiv preprint arXiv:2508.21357},
year = {2025}
}