Related papers: Electrically controlled spin-transistor operation …
We present semiclassical and quantum mechanical results for the effects of a strong magnetic field in Quantum Wires in the presence of Rashba Spin Orbit coupling. Analytical and numerical results show how the perturbation acts in the…
Magnetism typically arises from the joint effect of Fermi statistics and repulsive Coulomb interactions, which favors ground states with non-zero electron spin. As a result, controlling spin magnetism with electric fields---a longstanding…
How to control collectively ordered electronic states is a core interest of condensed matter physics. We report an electric field controlled reversible transition from superconductor to ferromagnetic insulator in (Li,Fe)OHFeSe thin flake…
We provide a theoretical framework for the electric field control of the electron spin in systems with diffusive electron motion. The approach is valid in the experimentally important case where both intrinsic and extrinsic spin-orbit…
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic…
We study effects of a gate-controlled Rashba spin-orbit coupling to quantum spin-Hall edge states in HgTe quantum wells. A uniform Rashba coupling can be employed in tuning the spin orientation of the edge states while preserving the…
Suspended nanowires are shown to provide mechanically-controlled coherent mixing/splitting of the spin states of transmitted electrons, caused by the Rashba spin-orbit interaction. The sensitivity of the latter to mechanical bending makes…
We show electric field control of the spin accumulation at the interface of the oxide semiconductor Nb-SrTiO$_{3}$ with Co/AlO$_{x}$ spin injection contacts at room temperature. The in-plane spin lifetime $\tau_\parallel$ as well as the…
To date, endeavors in nanoscale spintronics are dominated by the use of single-electron or single-spin transistors having at their heart a semiconductor, metallic or molecular quantum dot who's localized states are non-spin-degenerate and…
The sub-threshold swing is the fundamental critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the…
In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and…
We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform…
We calculate the current-voltage characteristic of a one-dimensional band insulator with magnetic field and Rashba spin-orbit coupling which is connected to nonmagnetic leads. Without spin-orbit coupling we find a complete spin-filtering…
We propose a resonant spin-field-effect transistor for chiral spin-resolved edge states in the integer quantum Hall effect with Rashba spin-orbit interaction. It employs a periodic array of voltage-controlled top gates that locally modulate…
We examine transport through a quantum dot coupled to three ferromagnetic leads in the regime of weak tunnel coupling. A finite source-drain voltage generates a nonequilibrium spin on the otherwise non-magnetic quantum dot. This spin…
Spin-orbit coupling is a manifestation of special relativity. In the reference frame of a moving electron, electric fields transform into magnetic fields, which interact with the electron spin and lift the degeneracy of spin-up and…
Spin-orbit torque provides an efficient pathway to manipulate the magnetic state and magnetization dynamics of magnetic materials, which is crucial for energy-efficient operation of a variety of spintronic devices such as magnetic memory,…
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…
The controllability of charge transport through an organic molecular spin-valve system is theoretically investigated on the basis of a Su-Schrieffer-Heeger model combined with the non-equilibrium Green's function formalism. We show how the…
We show that a Spin Field Effect Transistor, realized with a semiconductor quantum wire channel sandwiched between half-metallic ferromagnetic contacts, can have Fano resonances in the transmission spectrum. These resonances appear because…