Related papers: Lapis SOI Pixel Process

The FASER experiment at the LHC aims to detect new, long-lived fundamental particles. A tungsten-silicon (W-Si) preshower detector is being developed to enhance the experiment's ability to distinguish between closely spaced photon pairs…

The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) requires new high-radiation tolerant silicon pixel sensors for the innermost part of the tracking detector in the CMS experiment. The innermost layer of the tracker,…

Lensless on-chip microscopy has shown great potential for biomedical imaging due to its large-area and high-throughput imaging capabilities. By combining the pixel super-resolution (PSR) technique, it can improve the resolution beyond the…

Due to their radiation hardness, kilohertz frame rates, and high dynamic range, hybrid pixel detectors have recently expanded their application range to electron diffraction and recently also electron imaging. However, these detectors…

Motivated by the stringent requirements of the Upstream Pixel (UP) tracker in the LHCb Upgrade II and the Inner Tracking detector (ITK) of the Circular Electron Positron Collider, the COFFEE series of pixel sensor chips have been developed…

In semiconductor manufacturing, lithography has often been the manufacturing step defining the smallest possible pattern dimensions. In recent years, progress has been made towards high-NA (Numerical Aperture) EUVL…

The Silicon-On-Insulator PIXel (SOIPIX) detector is a unique monolithic structure imaging device currently being by the SOIPIX group, led by the High Energy Accelerator Research Organization (KEK). Our detector team at the KEK Photon…

The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single complex molecules…

Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit…

Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in…

Far-infrared detectors for future cooled space telescopes require ultra-sensitive detectors with optical noise equivalent powers of order 0.2 aW/\sqrt Hz. This performance has already been demonstrated in arrays of transition edge sensors.…

This report reviews current trends in the R&D of semiconductor pixellated sensors for vertex tracking and radiation imaging. It identifies requirements of future HEP experiments at colliders, needed technological breakthroughs and…

X-ray polarimetry in astronomy has not been exploited well, despite its importance. The recent innovation of instruments is changing this situation. We focus on a complementary MOS (CMOS) pixel detector with small pixel size and employ it…

Pixelated silicon detectors are state-of-the-art technology to achieve precise tracking and vertexing at collider experiments, designed to accurately measure the hit position of incoming particles in high rate and radiation environments.…

The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low…

An upgrade of the ATLAS experiment for the High Luminosity phase of LHC is planned for 2024 and foresees the replacement of the present Inner Detector (ID) with a new Inner Tracker (ITk) completely made of silicon devices. Depleted active…

During the LHC Long Shutdown 3 (2026-29) ALICE will replace its three innermost tracking layers by a new detector, the "ITS3". It will be based on newly developed, wafer-scale monolithic active pixel sensors, which are bent into truly…

Laser dicing of semiconductor wafers is a critical step in microelectronic manufacturing, where multiple sequential laser passes precisely separate individual dies from the wafer. Adapting this complex sequential process to new wafer…

A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50…

Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…