Related papers: Manipulating the voltage drop in graphene nanojunc…
Graphene is a promising candidate to succeed silicon based devices and doping holds the key to graphene electronics. Conventional doping methods through surface functionalization or lattice modification are effective in tuning carrier…
We study the effect of a local potential shift induced by a side electrode on the edge modes at the boundary between gapped and ungapped bilayer graphene. A potential shift close to the gapped-ungapped boundary causes the emergence of…
We investigate magnetotransport in a ferromagnetic/normal/ferromagnetic graphene junction where a gate electrode is attached to the normal segment. It is shown that the charge conductance can be maximal at an antiparallel configuration of…
We report an electron transport study of lithographically fabricated graphene nanoribbons of various widths and lengths at different temperatures. At the charge neutrality point, a length-independent transport gap forms whose size is…
The conductance of graphene nanoribbons and nanoconstrictions under the effect of a scanning gate microscopy tip is systematically studied. Using a scattering approach for noninvasive probes, the first- and second-order conductance…
We demonstrate that superconducting aluminium nano-bridges can be driven into a state with complete suppression of the critical supercurrent via electrostatic gating. Probing both in- and out-of-plane magnetic field responses in the…
The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different…
A spin field effect transistor (FET) is proposed by utilizing a graphene nanoribbon as the channel. Similar to the conventional spin FETs, the device involves ferromagnetic metals as a source and drain; they, in turn, are connected to the…
Linear conductance of junctions formed by graphene flakes with order of nanometer-thick electrodes attached at the corners of the flakes is studied. The explored structures have sizes up to 20000 atoms and the conductance is studied as a…
We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 micrometers long. Measurements as…
Electrostatic gating is essential for defining and control of semiconducting devices. However, nano-fabrication processes required for depositing gates inevitably degrade the pristine quality of the material of interest. Examples of…
We study the effects of metallic doping on the electronic properties of graphene using density functional theory in the local density approximation in the presence of a local charging energy (LDA+U). The electronic properties are sensitive…
Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin…
We show theoretically that graphene, which exhibits a massless Dirac like spectrum for its electrons, can exhibit unconventional Kondo effect that can be tuned by an experimentally controllable applied gate voltage. We demonstrate the…
We find clear signatures of spin-dependent negative differential resistance in compound systems comprising a graphene nanoribbon and a set of ferromagnetic insulator strips deposited on top of it. The periodic array of ferromagnetic strips…
The absence of a band-gap in graphene limits the gate modulation of its electron conductivity, both in regular graphene as well as in PN junctions, where electrostatic barriers prove transparent to Klein tunneling. We demonstrate a novel…
Using the self-consistent Hartree-Fock approximation, we study the compressibility instability of the interacting electrons in bilayer graphene. The chemical potential and the compressibility of the electrons can be significantly altered by…
It is demonstrated that the electric dipole layer due to the overlapping of electron wavefunctions at metal/graphene contact results in negative Fermi-level pinning effect on the region of GaAs surface with low interface-trap density in…
We investigate the transport properties of graphene underneath metal to reveal whether the carrier density in graphene underneath source/drain electrodes in graphene field-effect transistors is fixed. The resistance of the graphene/Ni…
One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected high mobility only in freely suspended…