Related papers: All-electric spin transistor based on a side-gate-…
The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…
The charge-current-induced spin polarization is a key property of topological insulators for their applications in spintronics. However, topological surface states are expected to give rise to only one type of spin polarization for a given…
We propose a Chern insulator in a two-dimensional electron system with Dresselhaus spin-orbit coupling, ferromagnetism, and spin-dependent effective mass. The analytically-obtained topological phase diagrams show the topological phase…
We investigate electron transporting through a two-dimensional ferromagnetic/normal/ferromagnetic tunnel junction on the surface of a three-dimensional topological insulator with taking into $\delta$ doping account. It is found that the…
We investigate spin transport in two dimensional ferromagnetic (FTI) and antiferromagnetic (AFTI) topological insulators. In presence of an in plane magnetization AFTI supports zero energy modes, which enables topologically protected edge…
Topological insulators insulate in the bulk but exhibit robust conducting edge states protected by the topology of the bulk material. Here, we design a colloidal topological insulator and demonstrate experimentally the occurrence of edge…
We detected the spin polarization due to charge flow in the spin non-degenerate surface state of a three dimensional topological insulator by means of an all-electrical method. The charge current in the bulk-insulating topological insulator…
Further development of the field of all-electric spintronics requires the successful integration of spin transport channels with spin injector/generator elements. While with the advent of graphene and related 2D materials high performance…
Spin-momentum helical locking is one of the most important properties of the nontrivial topological surface states (TSS) in 3D topological insulators (TI). It underlies the iconic topological protection (suppressing elastic backscattering)…
The coexistence of ferroelectric and topological orders in two-dimensional (2D) atomic crystals allows non-volatile and switchable quantum spin Hall states. Here we offer a general design principle for 2D bilayer heterostructures that can…
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
Three-dimensional topological insulators are a class of Dirac materials, wherein strong spin-orbit coupling leads to two-dimensional surface states. The latter feature spin-momentum locking, i.e., each momentum vector is associated with a…
We propose that a spin-dependent second-order topological insulator can be realized in monolayer FeSe/GdClO heterostructure, in which substrate GdClO helps to stabilize and enhance the antiferromagnetic order in FeSe. The second-order…
We study the thermoelectric response of a device containing a pair of helical edge states contacted at the same temperature $T$ and chemical potential $\mu$ and connected to an external reservoir, with different chemical potential and…
A strong coupling between the electron spin and its motion is one of the prerequisites of spin-based data storage and electronics. A major obstacle is to find spin-orbit coupled materials where the electron spin can be probed and…
Antiferromagnetic conductors with suitably broken spatial symmetries host spin-polarized bands, which lead to transport phenomena commonly observed in metallic ferromagnets. In bulk materials, it is the given crystalline structure that…
Spin field effect transistors (SpinFET) are an iconic class of spintronic devices that exploit gate tuned spin-orbit interaction in semiconductor channels interposed between ferromagnetic source and drain contacts to elicit transistor…
Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control…
We propose two schemes of a novel spin-optronic device, optical analog of Datta and Das spin transistor for the electrons. The role of ferromagnetic contacts is played by one-dimensional polariton channels with strong TE-TM splitting. A…