Electronic transport in ferromagnetic barriers on the surface of a topological insulator with $\delta$ doping
Abstract
We investigate electron transporting through a two-dimensional ferromagnetic/normal/ferromagnetic tunnel junction on the surface of a three-dimensional topological insulator with taking into doping account. It is found that the conductance oscillates with the Fermi energy, the position and the aptitude of the doping. Also the conductance depends sensitively on the direction of the magnetization of the two ferromagnets, which originate from the control of the spin flow due to spin-momentum locked. It is found that the conductance is the maximum at the parallel configuration while it is minimum at the antiparallel configuration and vice versa, which may stem from the half wave loss due to the electron wave entering through the antiparallel configuration. These characters are very helpful for making new types of magnetoresistance devices due to the practical applications.
Keywords
Cite
@article{arxiv.1307.1283,
title = {Electronic transport in ferromagnetic barriers on the surface of a topological insulator with $\delta$ doping},
author = {Jian-Hui Yuan and Yan Zhang and Daizheng Huang and Qinhu Zhong and Xin Zhang},
journal= {arXiv preprint arXiv:1307.1283},
year = {2013}
}
Comments
arXiv admin note: text overlap with arXiv:1211.6511, arXiv:0907.2810 by other authors