Related papers: Molecular Anisotropic Magnetoresistance
Using first-principles calculations, we study the magnetism of 5d transition-metal atomic junctions including structural relaxations and spin-orbit coupling. Upon stretching monatomic chains of W, Ir, and Pt suspended between two leads, we…
We theoretically study the twofold and fourfold symmetric anisotropic magnetoresistance (AMR) effects of ferromagnets. We here use the two-current model for a system consisting of a conduction state and localized d states. The localized d…
Understanding the magnetoresistance (MR) of a magnetic material forms the basis for uncovering the orbital mechanisms and charge-spin interactions in the system. Although the parent state of iron-based high-temperature superconductors,…
We report the observation of tunneling anisotropic magnetoresistance (TAMR) in an organic spin-valve-like structure with only one ferromagnetic electrode. The device is based on a new high mobility perylene diimide-based n-type organic…
We instigate the angle-dependent magnetoresistance (AMR) of the layered nodal-line Dirac semimetal ZrSiS for the in-plane and out-of-plane current directions. This material has recently revealed an intriguing butterfly-shaped in-plane AMR…
We study here, both experimentally and theoretically, the anisotropy of magnetoresistance in atomic contacts. Our measurements on iron break junctions reveal an abrupt and hysteretic switch between two conductance levels when a large…
The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2],…
We theoretically analyze the anisotropic magnetoresistance (AMR) effects of bcc Fe (+), fcc Co (+), fcc Ni (+), Fe$_4$N (-), and a half-metallic ferromagnet (-). The sign in each ( ) represents the sign of the AMR ratio observed…
The impact of carrier localization on the anisotropic magnetoresistance (AMR) has been investigated in NSSMO thin films. Carrier localization is caused by the reduced average radius of the A-site of the perovskite lattice and enhanced size…
Many of the most interesting and technologically important electronic materials discovered in the past two decades have two common features: a layered crystal structure and strong interactions between electrons. Two of the most fundamental…
Antiferromagnetic (AFM) spintronics, where magneto-transport is governed by an antiferromagnet instead of a ferromagnet, opens fascinating new perspectives for both fundamental research and device technology, owing to their intrinsic…
SrIrO3, the three-dimensional member of the Ruddlesden-Popper iridates, is a paramagnetic semimetal characterised by a the delicate interplay between spin-orbit coupling and Coulomb repulsion. In this work, we study the anisotropic…
Superconductivity and magnetism are generally incompatible because of the opposing requirement on electron spin alignment. When combined, they produce a multitude of fascinating phenomena, including unconventional superconductivity and…
We theoretically investigate inelastic transport through anisotropic magnetic molecules weakly coupled to one ferromagnetic and one nonmagnetic lead. We find that the current is suppressed over wide voltage ranges due to spin blockade. In…
MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc~90K demonstrate transition from metallic to insulating state below To~10K, where sheet resistances Rsh~h/e2 and both longitudinal Rxx and transverse Rxy components become…
In the last decade, nanoscale resistive devices with memory have been the subject of intense study because of their possible use in brain-inspired computing. However, operational endurance is one of the limiting factors in the adoption of…
Magnetic axis rotation (MAR) in ferromagnetic (FM) layers is crucial for strain-mediated converse magnetoelectric coupling. Employing the density functional theory (DFT), we computationally study the magnetic anisotropy of selected deformed…
Recent studies on the electrical switching of tetragonal antiferromagnet (AFM) via N{\'e}el spin-orbit torque have paved the way for the economic use of antiferromagnetic materials. The most difficult obstacle that presently limits the…
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…
We investigate the effects of strain on antiferromagntic (AFM) single crystal thin films of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to…