English

Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field

Materials Science 2015-08-20 v2 Mesoscale and Nanoscale Physics

Abstract

We theoretically study the twofold and fourfold symmetric anisotropic magnetoresistance (AMR) effects of ferromagnets. We here use the two-current model for a system consisting of a conduction state and localized d states. The localized d states are obtained from a Hamiltonian with a spin--orbit interaction, an exchange field, and a crystal field. From the model, we first derive general expressions for the coefficient of the twofold symmetric term (C2C_2) and that of the fourfold symmetric term (C4C_4) in the AMR ratio. In the case of a strong ferromagnet, the dominant term in C2C_2 is proportional to the difference in the partial densities of states (PDOSs) at the Fermi energy (EFE_{\rm F}) between the dεd\varepsilon and dγd\gamma states, and that in C4C_4 is proportional to the difference in the PDOSs at EFE_{\rm F} among the dεd\varepsilon states. Using the dominant terms, we next analyze the experimental results for Fe4_4N, in which C2|C_2| and C4|C_4| increase with decreasing temperature. The experimental results can be reproduced by assuming that the tetragonal distortion increases with decreasing temperature.

Keywords

Cite

@article{arxiv.1507.05912,
  title  = {Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field},
  author = {Satoshi Kokado and Masakiyo Tsunoda},
  journal= {arXiv preprint arXiv:1507.05912},
  year   = {2015}
}

Comments

42 pages, 11 figures, to be published in J. Phys. Soc. Jpn. Vol. 84 (2015) No. 9, minor mistakes corrected