Related papers: Electron back scattering in CNTFETs
We calculate low-frequency Raman scattering from the confined acoustic phonon modes of CdS1-xSex nanoparticles embedded in borosilicate glass. The calculation of the Raman scattering by acoustic phonons in nanoparticles has been performed…
Our objective is to study resonant tunneling of an electron in the presence of inelastic scattering by optical phonons. Using a recently developed technique, based on exact mapping of a many-body problem onto a one-body problem, we compute…
The controlled and accurate emission of coherent electronic wave packets is of prime importance for future applications of nano-scale electronics. Here we present a theoretical and experimental analysis of the finite-frequency noise…
Polar dielectrics are a promising platform for mid-infrared nanophotonics, allowing for nanoscale electromagnetic energy confinement in oscillations of the crystal lattice. We recently demonstrated that in nanoscopic polar systems a local…
State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However,…
We study numerically self-trapped (polaron) states of quasiparticles (electrons, holes or excitons) in a deformable nanotube formed by a hexagonal lattice, wrapped into a cylinder (carbon- and boron nitride-type nanotube structures). We…
We develop a fermi-bose bootstrap embedding (fb-BE) framework for the ground state of interacting elec- trons coupled to phonon mean field. The method combines bootstrap embedding for correlated electrons with a self-consistent…
Effects of the backward scattering with large momentum transfer are examined in two-dimensional electron system with a special emphasis on electrons around ($\pi$,0), (0,$\pi$). The phase diagram is shown in the plane of temperature $T$ and…
Current-voltage characteristics of suspended single-wall carbon nanotube quantum dots show a series of steps equally spaced in voltage. The energy scale of this harmonic, low-energy excitation spectrum is consistent with that of the…
Recent experiments in silicon MOSFETs indicate that the Hall coefficient is independent of magnetic field applied at a small angle with respect to the plane. Below a scattering between spin-up and spin-down carriers is considered to be the…
We investigate electronic transport properties of Schottky-barrier field-effect transistors (FET) based on double-walled carbon nanotubes (DWNT) with a semiconducting outer shell and a metallic inner one. These kind of DWNT-FET show…
We present an effective low-energy theory of electron-phonon coupling effects for clean cylindrical topological insulator nanowires. Acoustic phonons are modelled by isotropic elastic continuum theory with stress-free boundary conditions.…
We present a technique to calculate the transport properties through one-dimensional models of molecular wires. The calculations include inelastic electron scattering due to electron-lattice interaction. The coupling between the electron…
The conductance of a weakly interacting electron gas in the presense of a single scatterer is found at arbitrary strength of the scattering potential. At weak interaction, a simple renormalization group approach can be used instead of the…
We study the scattering of an electron by a ferromagnetic domain wall of the quantum Heisenberg-Ising model (XXZ model) with certain boundary conditions. The spin of the electron interacts with the spins of the XXZ model by the Hund…
Numerous experimental and theoretical studies have focused on low-dimensional systems locally perturbed by the biased tip of a scanning force microscope. In all cases either open or closed weakly gate-tunable nanostructures have been…
A resolvent formalism is applied to the problem of inelastic scattering of an electron linearly coupled to a set of phonon modes. It is shown how the many phonon mode coupling and excitation can be reduced to a single phonon mode…
We consider nanowires in the field effect transistor device configuration. Modeling each nanowire as a one dimensional lattice with random site potentials, we study the heat exchanges between the nanowire electrons and the substrate…
The variation with energy of the total cross section for elastic electron scattering from atoms of several elements is caused primarily by shape resonances corresponding to the formation of temporary negative ions. It is shown that such…
We present a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) including contact resistance, direct source-to-drain and band-to-band tunneling currents. The model captures the effects of dimensional…