Related papers: Electron back scattering in CNTFETs
With decreasing device dimensions, the performance of carbon nanotube field-effect transistors (CNFETs) is limited by high Off currents except at low drain voltages. We show that an asymmetric design improves the performance, reducing Off…
We discuss a semiclassical approach to solve the quantum impurity model within non-equilibrium dynamical mean-field theory for electron-lattice models. The effect of electronic fluctuations on the phonon is kept beyond Ehrenfest dynamics,…
We use the energy analysis as a perturbative method to study the effect of electron-radial breathing mode (RBM) phonon interaction on the electrical conductivity of long metallic zigzag carbon nanotubes (CNTs). The band structure of zigzag…
The use of carbon nanotube (CNT) field-effect transistors (FETs) in microwave circuit design requires an appropriate, immediate and efficient description of their performance. This work describes a technique to extract the parameters of an…
The realization of mixtures of excitons and charge carriers in van-der-Waals materials presents a new frontier for the study of the many-body physics of strongly interacting Bose-Fermi mixtures. In order to derive an effective low-energy…
Single walled carbon nanotubes with Pd ohmic contacts and lengths ranging from several microns down to 10 nm are investigated by electron transport experiments and theory. The mean free path (mfp) for acoustic phonon scattering is estimated…
Plasmonic antennas integrated on silicon devices have large and yet unexplored potential for controlling and routing light signals. Here, we present theoretical calculations of a hybrid silicon-metallic system in which a single gold…
Spatially resolved photocurrent measurements on carbon nanotube field-effect transistors (CNFETs) operated in various transport regimes are reported. It is demonstrated that the photocurrents measured at different biasing conditions provide…
We report on the novel mechanism of electron scattering in hybrid Bose-Fermi systems consisting of a two-dimensional electron gas in the vicinity of an exciton condensate: We show that a pair-of-bogolons--mediated scattering proves to be…
Substantial progress on field effect transistors "FETs" consisting of semiconducting single wall carbon nanotubes "s-SWNTs" without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic…
The dynamical interplay between electron-electron interactions and electron-phonon coupling is investigated within the Anderson-Holstein model, a minimal model for open quantum systems that embody these effects. The influence of phonons on…
The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field…
Topological insulators were originally discovered for electron waves in condensed matter systems. Recently this concept has been transferred to bosonic systems such as photons and phonons, which propagate in materials patterned with…
We study all of the leading-order contributions to spin relaxation of \textit{conduction} electrons in silicon due to the electron-phonon interaction. Using group theory, $k\cdot p$ perturbation method and rigid-ion model, we derive an…
We wish to draw an attention to a non-gibbsian behavior of zero-dimensional semiconductor nanostructures, which appears to be manifested in experiments by an effect of incomplete depopulation from electronic excited states or by an effect…
There is great interest in the development of novel nanomachines that use charge, spin, or energy transport, to enable new sensors with unprecedented measurement capabilities. Electrical and thermal transport in these mesoscopic systems…
In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the 'conventional' model for SB-FETs…
Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate…
Electrical transport through single-walled carbon nanotubes (SWNTs) is investigated by using the nearest-neighbor tight-binding model coupled with two electron reservoirs. When the SWNT-electrode coupling is not axially symmetric,…
Motivated by the observation in copper-oxide high-temperature superconductors, we investigate the appearance of kinks in the electronic dispersion due to coupling to phonons for a system with strong electronic repulsion. We study a Hubbard…