Related papers: Electron back scattering in CNTFETs
Theoretical calculations of carrier transport in single-walled carbon nanotubes are compared with recent experiments. Carrier-phonon scattering is accounted for using the deformation potential approximation. Comparing with experiments, a…
High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to…
We present a conceptually simple method for treating electron-phonon scattering and phonon limited mobilities. By combining Green's function based transport calculations and molecular dynamics (MD), we obtain a temperature dependent…
We report density-functional theory (DFT), atomistic simulations of the non-equilibrium transport properties of carbon nanotube (CNT) field-effect transistors (FETs). Results have been obtained within a self-consistent approach based on the…
A model is developed for a detailed investigation of the current flowing through a cylindrical nanosize MOSFET with a close gate electrode. The quantum mechanical features of the lateral charge transport are described by Wigner distribution…
The thermal transport properties of single-wall carbon nanotubes (SWCNTs) are re-investigated using the iterative solution of the Boltzmann transport equation by including four-phonon scattering. Using only three-phonon scattering, the…
Using in-situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that its phonons with A$_g$ symmetry depend much more strongly on concentration of electrons than that of holes,…
We study the negative correction to the quantized value $2e^2/h$ of the conductance of a quantum point contact due to the backscattering of electrons by acoustic phonons. The correction shows activated temperature dependence and also gives…
Computationally inexpensive approximations describing electron-phonon scattering in molecular-scale conductors are derived from the non-equilibrium Green's function method. The accuracy is demonstrated with a first principles calculation on…
The nonlocal electron-phonon couplings in organic semiconductors responsible for the fluctuation of intermolecular transfer integrals has been the center of interest recently. Several irreconcilable scenarios coexist for the description of…
We present a rigorous solution of the Boltzmann equation for the electron-phonon scattering problem in three spatial dimensions in the limit of low temperatures. The different temperature scaling of the various scattering rates turns the…
In this work we propose a fully experimental method to extract the barrier lowering in short-channel saturated MOSFETs using the Lundstrom backscattering transport model in a one sub-band approximation and carrier degeneracy. The knowledge…
Short channel (~80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-k gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter ~ 1.6 nm…
We derive the steady-state electron distribution function for a semiconductor driven far from equilibrium by the inter-band photoexcitation assumed homogeneous over the nanoscale sample. Our analytical treatment is based on the…
The monolayer of black phosphorous, or phosphorene, has recently emerged as a new 2D semiconductor with intriguing highly anisotropic transport properties. Existing calculations of its intrinsic phonon-limited electronic transport…
Power dissipation has become a major obstacle in performance scaling of modern integrated circuits, and has spurred the search for devices operating at lower voltage swing. In this letter, we study p-i-n band-to-band tunneling field effect…
Carbon nanotubes (CNT) have a very large application potential in the rapid developing field of molecular electronics. Infinite single-wall metallic CNTs have theoretically a conductance of 4e2/h because of the two electronic bands crossing…
We investigate the role of electron-phonon scattering and gate bias in degrading the drive current of nanotube MOSFETs. Our central results are: (i) Optical phonon scattering significantly decreases the drive current only when gate voltage…
A semiempirical theory for the excitation and subsequent relaxation of nonthermal electrons is described. The theory, which is applicable to ultrafast-laser excited metals, is based on the Boltzmann transport equation for the carrier…
The effect of the up-conversion of the electronic energy level occupation was earlier interpreted as an implication of the multiple scattering of the charge carriers on the longitudinal optical phonons of the lattice vibrations in a small…