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We introduce a new output amplifier for fully-depleted thick p-channel CCDs based on double-gate MOSFETs. The charge amplifier is an n-type MOSFET specifically designed and operated to couple the fully-depleted CCD with high charge-transfer…
CMOS sensors were successfully implemented in the STAR tracker [1]. LHC experiments have shown that efficient b tagging, reconstruction of displaced vertices and identification of disappearing tracks are necessary. An improved vertex…
An array of DEPFET pixels is one of several concepts to implement an active pixel sensor. Similar to PNCCD and SDD detectors, the typically 0.45 mm thick silicon sensor is fully depleted by the principle of sideward depletion. They have…
The H2M (Hybrid-to-Monolithic) is a monolithic pixel sensor manufactured in a modified \SI{65}{\nano\meter}~CMOS imaging process with a small collection electrode. Its design addresses the challenges of porting an existing hybrid pixel…
A CMOS pixel sensor, named Supix-1, is developed for a pixelated silicon tracker for the Circular Electron-Positron Collider (CEPC) project. The sensor, consisted of nine sectors varying in pixel sizes, diode sizes and geometries, is…
This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $\mu$m and a thin…
Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure…
DEPleted Field Effect Transistor (DEPFET) active pixel detectors combine a first amplification stage with a fully depleted sensor in one single device, resulting in a very good signal-to-noise ratio even for thin sensors. DEPFET pixels are…
The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL. This opens the door to the use of CPS for inner tracking…
LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the…
Swift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high…
The upgrade to the High Luminosity Large Hadron Collider will pose unprecedented challenges to the tracking systems of all experiments. Recent advancement of active pixel detectors designed in CMOS processes provide attractive alternatives…
We have constructed and tested a 2d position sensitive parallel-plate gas ionization chamber with scanned charge transfer readout. The scan readout method described here is based on the development of a new position dependent charge…
A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The…
Highly granular pixel detectors allow for increasingly precise measurements of charged particle tracks. Next-generation detectors require that pixel sizes will be further reduced, leading to unprecedented data rates exceeding those foreseen…
Ensuring end-to-end security in image sensors has become essential as visual data can be exposed through multiple stages of the imaging pipeline. Advanced protection requires encryption to occur before pixel values appear on any readout…
Using Commercial Off-The-Shelf (COTS) Operational Amplifiers (OpAmps) and Complementary Metal-Oxide Semiconductor (CMOS) transistors, we present a demonstration of the Q-Pix front-end architecture, a novel readout solution for kiloton-scale…
CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Being manufactured with cost efficient standard CMOS processes, CPS may integrate…
MiniCACTUS is a monolithic sensor prototype optimised for timing measurement of charged particles. It has been designed in a standard 150 nm CMOS process without dedicated amplification layer. It is intended as a demonstrator chip for…
Direct electron detection is currently revolutionizing many fields of electron microscopy due to its lower noise, its reduced point-spread function, and its increased quantum efficiency. More specifically to this work, Timepix3 is a…