Related papers: Electron localization in self-assembled Si/Ge(111)…
A five-level {\Pp} model of the band structure for GaAs-type semiconductors is used to describe the spin $g^*$-factor and the cyclotron mass $m^*_c$ of conduction electrons in GaAs/Ga$_{1-x}$Al$_x$As quantum wells in an external magnetic…
The electron g-factor measured in a quantum point contact by source-drain bias spectroscopy is significantly larger than its value in a two-dimensional electron gas. This enhancement, established experimentally in numerous studies, is an…
In this study we numerically calculate the spatial profile of mechanical strain on self-assembled germanium (Ge) quantum dots (QDs) grown on a silicon (Si) substrate. Although the topic has been exhaustively studied, interesting features…
A high-precision numerical calculation is reported for the self-energy correction to the hyperfine splitting and to the bound-electron g factor in hydrogenlike ions with low nuclear charge numbers. The binding nuclear Coulomb field is…
Spin qubits based on Si and Si$_{1-x}$Ge$_{x}$ quantum dot architectures exhibit among the best coherence times of competing quantum computing technologies, yet they still suffer from charge noise that limit their qubit gate fidelities.…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
Nanowire double quantum dots occupied by an even number of electrons are investigated in the context of energy level structure revealed by electric dipole spin resonance measurements. We use numerically exact configuration interaction…
We introduce a new functional for simulating ground-state and time-dependent electronic systems within density-functional theory. The functional combines an expression for the exact Kohn-Sham (KS) potential in the limit of complete electron…
We study electron transmission through a periodic array of quantum dots (QD) sandwiched between doped semiconductor leads. When the Fermi wavelength of tunneling electron exceeds the array lattice constant, the off-resonant per QD…
We present high-precision spectroscopy of the ground-state hyperfine structure of HD$^+$ at 4~T. We determine the bound-electron $g$ factor, $g_{e,\mathrm{bound}} = -2.002\,278\,540\,96(40)$, to a relative uncertainty of…
We report a large g-factor tunability of a single hole spin in an InGaAs quantum dot via an electric field. The magnetic field lies in the in-plane direction x, the direction required for a coherent hole spin. The electrical field lies…
Electron energy loss near edge spectra (ELNES) has been calculated for two different Fe based superconducting material FeSe and FeTe using density functional theory (DFT). Fe K-edge absorption spectra consist of several features, origins of…
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation…
In this work we present a comprehensive theory of spin physics in planar Ge hole quantum dots in an in-plane magnetic field, where the orbital terms play a dominant role in qubit physics, and provide a brief comparison with experimental…
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at…
Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursued to increase the valley splitting energy deterministically,…
We consider the problem of electron transport along a one-dimensional disordered multiple-scattering conductor, and study the electron density for all the electronic levels. A model is proposed for the reduced density matrix of the system…
Electron spin resonance measurements in EuFe2As2 single crystals revealed an absorption spectrum of a single resonance with Dysonian lineshape. Above the spin-density wave transition at T_SDW = 190 K the spectra are isotropic and the spin…
We study the development of electron-electron correlations in circular quantum dots as the density is decreased. We consider a wide range of both electron number, N<=20, and electron gas parameter, r_s<18, using the diffusion quantum Monte…
Electronic transport is theoretically investigated in laterally confined semiconductor superlattices using the formalism of non-equilibrium Green's functions. The transport properties are calculated for nanowire superlattices of varying…