Related papers: Finite Size Effect in Amorphous Indium oxide
Profound finite size effects are observed in both the moment and ordering temperature in thin Co$_{70}$Zr$_{30}$ layers. The results are consistent with the presence of interface regions with reduced magnetic interactions and moment. The…
We study the two-dimensional superconductor-insulator transition (SIT) in thin films of tantalum nitride. At zero magnetic field, films can be disorder-tuned across the SIT by adjusting thickness and film stoichiometry; insulating films…
The magnetic properties of thin-film Pd/Fe/Pd trilayers in which an embedded ~1.5 A-thick ultrathin layer of Fe induces ferromagnetism in the surrounding Pd have been investigated. The thickness of the ferromagnetic trilayer is controlled…
We report on the normal-superconducting phase transition in thick $\mathrm{YBa_{2}Cu_{3}O_{7-\delta}}$ films in zero magnetic field. We find significant finite-size effects at low currents even in our thickest films ($d = 3200$ \AA). Using…
Magnetic field and electrostatically tuned superconductor-insulator (SI) transitions of ultrathin metal films with levels of disorder that place them near the disorder-tuned SI transition appear to be direct, continuous quantum phase…
In our previously published work, we have reported colossal magnetoresistance, Andreev oscillations, ferromagnetism, and granular superconductivity in oxygen-implanted carbon fibers, graphite foils, and highly oriented pyrolytic graphite.…
Recent experiments on amorphous materials have established the existence of surface states similar to those of crystalline three-dimensional topological insulators (TIs). Amorphous topological insulators are also independently of interest…
A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum…
We have studied the electron transport in SiO${}_2$(Co)/GaAs and SiO${}_2$(Co)/Si heterostructures, where the SiO${}_2$(Co) structure is the granular SiO${}_2$ film with Co nanoparticles. In SiO${}_2$(Co)/GaAs heterostructures giant…
We have grown thin films of (100) oriented La_{0.67}(Ca_{x}Sr_{1-x})_{0.33}MnO_{3} on (100) NdGaO_{3} substrates by off-axis sputtering. We have looked at the changes in the resistivity and magnetoresistance of the samples as the Ca/Sr…
Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of…
We present here the results on superconducting properties in tantalum thin films (100nm thick) deposited on three-dimensional graphene (3DG) and carbon structures. A superconducting transition is observed in both composite thin films with a…
Advances in opto-electronics are often led by discovery and development of materials featuring unique properties. Recently the material class of transparent conductive oxides (TCO) has attracted attention for active photonic devices…
We present a heuristic, semiphenomenological model of the anomalous temperature (T) dependence of resistivity Rxx recently observed experimentally in the quasi-one-dimensional (Q1D) organic conductors of the (TMTSF)2X family in moderately…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
The effect of the magnetic field on the critical behavior of RbOs2O6 is investigated. We present and analyze magnetization data, revealing remarkable consistency with a magnetic field induced finye size effect. It is traced back that at…
Amorphous oxide semiconductors, especially indium oxide-based (InOx) thin-films, have been major candidates for high mobility with easy-to-use device processability. As one of the dopants in InOx semiconductors, we proposed Si to design a…
A superconductor is influenced by an applied magnetic field. Close to the transition temperature $T_{c}$ fluctuations dominate and the correlation length $\xi $ increases strongly when $T_{c}$ is approached. However, for nonzero magnetic…
We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields…
We report quantum interference effects in InAs semiconductor nanowires strongly coupled to superconducting electrodes. In the normal state, universal conductance fluctuations are investigated as a function of magnetic field, temperature,…