Related papers: Finite Size Effect in Amorphous Indium oxide
We calculate the transition temperature in ultranarrow superconducting wires as a function of wire width, resistance and applied magnetic field. We compare the results of first-order perturbation theory and the non-perturbative resummation…
The magnetical field tuned superconductor-insulator transition in amorphous thin films, e.g., Ta and InO, exhibits a range of yet unexplained curious phenomena, such as a putative low-resistance metallic phase intervening the…
In framework of Ginzburg-Landau model it is shown that narrow superconducting film with width w ~ 3-8 \xi(T) (\xi(T) is a temperature dependent coherence length) exhibits unusual transport properties. In the absence of bulk pinning its…
We report on the finite size effects in the Verwey transition of stress-free magnetite Fe3O4 thin films. A limit thickness of 20 nm is evidenced, above which the transition temperature TV is constant and close to 120 K (bulk value) and…
Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were investigated for materials with different doping levels at different temperatures…
We report on unique electronic properties in Fe-SiO2 nanocomposite thin films in the vicinity of the percolation threshold. The electronic transport is dominated by quantum corrections to the metallic conduction of the Infinite Cluster…
The transport properties, resistance, Hall effect, and low T magnetoresistance for very oxygen overdoped nonsuperconducting Bi2Sr2CuO6+d (Bi2201) thin films are reported. From 20 to 300K, the temperature dependence of the resistance is well…
The superconductor-insulator transition in ultrathin films of amorphous Bi was tuned by changing the film thickness, with and without an applied magnetic field. The first experimentally obtained phase diagram is mapped as a function of…
Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT)…
Finite size effects in the localization properties of disordered quantum wires are analyzed through conductance calculations. Disorder is induced by introducing vacancies at random positions in the wire and thus preserving the chiral…
We have studied the temperature dependence of resistivity, $\rho$, for a two-dimensional electron system in silicon at low electron densities, $n_s\sim10^{11}$ cm$^{-2}$, near the metal/insulator transition. The resistivity was empirically…
We investigate the effect of various fluctuation mechanisms on the DC resistance in superconducting devices based on epitaxial titanium nitride (TiN) films. The samples we studied show a relatively steep resistive transition (RT), with a…
Field-tuned superconductor-insulator transition (FSIT) behavior in 2D isotropic and homogeneous thin films is usually accompanied by a nonvanishing critical resistance at low $T$. It is shown that, in a 2D film including line defects…
Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…
In this work, the results of fabricating ultra thin VO$_2$ films on the technologically relevant amorphous SiO$_2$ surface using reactive DC magnetron sputtering are presented. Results indicate that a post deposition anneal in low partial…
We report structural, magnetization, electrical resistivity and nuclear- and electron spin resonance data of the complex transition metal oxide In_2VO_5 in which structurally well-defined V-O chains are realized. An itinerant character of…
We have investigated the temperature evolution of magnetism and its interrelation with structural parameters in perovskite-based layered compound Sr$_2$IrO$_4$, which is believed to be a $J_{eff}$ = 1/2 Mott insulator. The structural…
High-quality epitaxial SrVO3 (SVO) thin films of various thicknesses were grown on (001)-oriented LSAT substrates by pulsed electron-beam deposition technique. Thick SVO films (~25 nm) exhibited metallic behavior with the electrical…
We have investigated a series of superconducting bridges based on homogeneous amorphous WSi and MoSi films, with bridge widths w ranging from 2 um to 1000 um and film thicknesses d ~ 4-6 nm and 100 nm. Upon decreasing the bridge widths…
We have fabricated indium-doped ZnO (IZO) nanowires (NWs) and carried out 4-probe electrical-transport measurements at low temperatures. The NWs reveal charge conduction behavior characteristic of disordered metals. In addition to the $T$…