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Related papers: Emergent nanoscale superparamagnetism at oxide int…

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We report the formation of a non-magnetic band insulator at the isopolar interface between the antiferromagnetic Mott-Hubbard insulator LaTiO3 and the antiferromagnetic charge transfer insulator LaFeO3. By density functional theory…

Strongly Correlated Electrons · Physics 2014-12-10 J. E. Kleibeuker , Z. Zhong , H. Nishikawa , J. Gabel , A. Müller , F. Pfaff , M. Sing , K. Held , R. Claessen , G. Koster , G. Rijnders

At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the…

Interface structure at polar/non-polar interfaces has been shown to be a key factor in controlling emergent behavior in oxide heterostructures, including the LaFeO$_3$/$\textit{n}$-SrTiO$_3$ system. We demonstrate via high energy resolution…

Materials Science · Physics 2016-11-28 Ryan Comes , Scott Chambers

Ferroelectrics are characterized by domain structures as are other ferroics. At the nanoscale though, ferroelectrics may exhibit non-trivial or exotic polarization configurations under proper electrostatic and elastic conditions. These…

Materials Science · Physics 2019-11-15 Saul Estandia , Florencio Sanchez , Matthew F. Chisholm , Jaume Gazquez

Atomically flat interfaces between ternary oxides have chemically different variants, depending on the terminating lattice planes of both oxides. Electronic properties change with the interface termination which affects, for instance,…

Oxide heterostructures are of great interest both for fundamental and applicative reasons. In particular the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ or LaTiO$_3$/SrTiO$_3$ interfaces displays many different physical…

Mesoscale and Nanoscale Physics · Physics 2016-01-20 N. Scopigno , D. Bucheli , S. Caprara , J. Biscaras , N. Bergeal , J. Lesueur , M. Grilli

To resolve the microscopic origin of magnetism in the Fe2O3/FeTiO3-system, we have performed density functional theory calculations taking into account on-site Coulomb repulsion. By varying systematically the concentration, distribution and…

Materials Science · Physics 2009-09-23 Rossitza Pentcheva , Hasan Sadat Nabi

La0.9Ba0.1MnO3 is a ferromagnetic insulator in its bulk form, but exhibits metallicity in thin film form. It has a wide potential in a range of spintronic-related applications, and hence it is critical to understand thickness-dependent…

Strongly Correlated Electrons · Physics 2017-10-25 Weiwei Li , Josee E. Kleibeuker , Rui Wu , Kelvin H. L. Zhang , Chao Yun , Judith L. MacManus-Driscoll

Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observed a giant flexoelectric response in freestanding BiFeO3 and SrTiO3 in their bent…

Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for…

Interfaces can differ from their parent compounds in terms of charge, spin, and orbital orders and are fertile ground for emergent phenomena, strongly correlated physics, and device applications. Here, we discover that ferroelectric order…

Superconductivity · Physics 2025-06-19 M. D. Dong , X. B. Cheng , M. Zhang , J. Wu

We present the synthesis and study of the magnetic and electronic properties of NiFe2O4/{\gamma}-Al2O3/SrTiO3 heterostructure. The {\gamma}-Al2O3/SrTiO3 interface hosts a high-mobility two-dimensional electron gas (2DEG) with large…

The oxide heterostructure LaAlO3/SrTiO3 supports a two-dimensional electron liquid with a variety of competing phases including magnetism, superconductivity and weak antilocalization due to Rashba spin-orbit coupling. Further confinement of…

Electronic, lattice, and spin interactions at the interfaces between crystalline complex transition metal oxides can give rise to a wide range of functional electronic and magnetic phenomena not found in bulk. At hetero-interfaces, these…

Strongly Correlated Electrons · Physics 2017-08-03 S. Koohfar , A. S. Disa , M. Marshall , F. J. Walker , C. H. Ahn , D. P. Kumah

The electronic reconstruction at the interface between two insulating oxides can give rise to a highly-conductive interface. In analogy to this remarkable interface-induced conductivity we show how, additionally, magnetism can be induced at…

Strongly Correlated Electrons · Physics 2007-06-13 A. Brinkman , M. Huijben , M. van Zalk , J. Huijben , U. Zeitler , J. C. Maan , W. G. van der Wiel , G. Rijnders , D. H. A. Blank , H. Hilgenkamp

Atomically engineered oxide multilayers and superlattices display unique properties responsive to the electronic and atomic structures of the interfaces. We have followed the growth of ferroelectric BaTiO3 on SrRuO3 electrode with in situ…

Understanding, creating, and manipulating spin polarization of two-dimensional electron gases at complex oxide interfaces presents an experimental challenge. For example, despite almost a decade long research effort, the microscopic origin…

Strongly Correlated Electrons · Physics 2021-01-12 Fangdi Wen , Yanwei Cao , Xiaoran Liu , Banabir Pal , Srimanta Middey , Mikhail Kareev , Jak Chakhalian

Understanding and controlling the interfacial magnetic properties of ferromagnetic thin films are crucial for spintronic device applications. However, using conventional magnetometry, it is difficult to detect them separately from the bulk…

Materials Science · Physics 2017-06-21 Le Duc Anh , Noboru Okamoto , Munetoshi Seki , Hitoshi Tabata , Masaaki Tanaka , Shinobu Ohya

The unique electronic structure found at interfaces between materials can allow unconventional quantum states to emerge. Here we observe superconductivity in electron gases formed at interfaces between (111) oriented KTaO$_3$ and insulating…

A hysteretic in-plane magnetoresistance develops below the superconducting transition of LaAlO$_3$/SrTiO$_3$ interfaces for $\left|H_{/\!/}\right|<$ 0.15 T, independently of the carrier density or oxygen annealing. We show that this…

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