Related papers: Striped quantum Hall state in a half-filled Landau…
We report ultra-low temperature experiments on the obscure fractional quantum Hall effect (FQHE) at Landau level filling factor $\nu$=5/2 in a very high mobility specimen of $\mu=1.7 \times 10^7$ cm$^2$/Vs. We achieve an electron…
Bernal bilayer graphene hosts even denominator fractional quantum Hall states thought to be described by a Pfaffian wave function with nonabelian quasiparticle excitations. Here we report the quantitative determination of fractional quantum…
The single-particle spectral function for an incompressible fractional quantum Hall state in the presence of a scalar short-ranged attractive impurity potential is calculated via exact diagonalization within the spherical geometry. In…
The observation of new insulating phases of two-dimensional electrons in the first excited Landau level is reported. These states, which are manifested as re-entrant integer quantized Hall effects, exist alongside well-developed…
In this work, we investigate the spatial distributions and the widths of the incompressible strips, i.e. the edgestates. The incompressible strips that correspond to \nu=1,2 and 1/3 filling factors are examined in the presence of a strong…
We study the fractional quantum Hall effect at filling fractions 7/3 and 5/2 in the presence of the spin-orbit interaction, using the exact diagonalization method and the density matrix renormalization group (DMRG) method in a spherical…
We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study…
We propose an exact model of anyon ground states including higher Landau levels, and use it to obtain fractionally quantized Hall states at filling fractions $\nu=p/(p(m-1)+1)$ with $m$ odd, from integer Hall states at $\nu=p$ through…
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…
The Pfaffian phase of electrons in the proximity of a half-filled Landau level is understood to be a p+ip superconductor of composite fermions. We consider the properties of this paired quantum Hall phase when the pairing scale is small,…
We study tunneling phenomena at the edge of the anti-Pfaffian quantum Hall state at the filling factor $\nu=5/2$. The edge current in a single point-contact is considered. We focus on nonlinear behavior of two-terminal conductance with the…
We propose an effective field theory (EFT) of fractional quantum Hall systems near the filling fraction $\nu=5/2$ that flows to pertinent IR candidate phases, including non-abelian Pfaffian, anti-Pfaffian, and particle-hole Pfaffian states…
The Pfaffian quantum Hall states, which can be viewed as involving pairing either of spin-polarized electrons or of composite fermions, are generalized by finding the exact ground states of certain Hamiltonians with k+1-body interactions,…
The observation of extensive fractional quantum Hall states in graphene brings out the possibility of more accurate quantitative comparisons between theory and experiment than previously possible, because of the negligibility of finite…
We present a quantitative study of most prominent incompressible quantum Hall states in the partially filled first excited Landau level (LL1) which have been recently studied experimentally by Choi et al. The pseudopotential describing the…
The fractional quantum Hall (FQH) effect at the filling number $\nu=5/2$ is a primary candidate for non-Abelian topological order, while the fate of such a state in the presence of random disorder has not been resolved. Here, we address…
The PH-Pfaffian topological order has been proposed as a candidate order for the $\nu=5/2$ quantum Hall effect. The PH-Pfaffian liquid is known to be the ground state in several coupled wire and coupled stripe constructions. No…
Fractional quantum Hall states have been observed at filling factor $\nu=3/4$ in GaAs hole system and bilayer graphene. In theoretical bootstrap analysis, it was revealed that non-Abelian topological orders with Ising anyons can be realized…
The abelian hierarchy of quantum Hall states accounts for most of the states in the lowest Landau level, and there is evidence of a similar hierarchy of non-abelian states emanating from the {\nu} = 5/2 Moore-Read state in the second Landau…
Atomic vapors can be prepared and manipulated at very low densities and temperatures. When they are rotating, they can reach a quantum Hall regime in which there should be manifestations of the fractional quantum Hall effect. We discuss the…