Related papers: On the Origin of the Second-Order Nonlinearity in …
We theoretically investigate silicon doped bilayer graphene, Si-BLG, with different stoichiometry of Si-BLG structures. The dangling bonds of C-Si atoms are found at low concentration ratio of Si atoms inducing sp$^3$-hybridization of…
A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous…
We fabricate silicon waveguides in silicon-on-insulator (SOI) wafers clad with either silicon dioxide, silicon nitride, or aluminum oxide, and by measuring the electro-optic behavior of ring resonators, we characterize the…
The coherent photogalvanic effect leads to the generation of a current under the absorption interference of coherent beams and allows for the inscription of space-charge gratings leading to an effective second-order susceptibility…
We introduce a first-principles study to clarify the carrier-scattering property at the SiC/SiO$_2$. Interestingly, the electron transport at the conduction-band edge is significantly affected by the introduction of oxygen, even though…
We have derived the local electric field inside graded metal-dielectric composite films with weak nonlinearity analytically, which further yields the effective linear dielectric constant and third-order nonlinear susceptibility of the…
A theory for the relation between the spin polarization and luminescence in silicon is presented. The theory provides intuitive relations for phonon-assisted optical transitions between the conduction and valence band edges. It is shown…
Second-harmonic generation (SHG) is a direct measure of the strength of second-order nonlinear optical effects, which also include frequency mixing and parametric oscillations. Natural and artificial materials with broken…
An inverse spin Hall effect (ISHE) in n-type silicon was observed experimentally when conduction electrons were scattered on the spin-orbit potential of bismuth. The spin current in the silicon layer was generated by excitation of the…
Flexoelectricity - polarization induced by strain gradients - offers a route to polar functionality in centrosymmetric dielectrics, where traditional piezoelectric effects are absent. This study investigates the flexoelectric effect in…
Fabrication of a multistrip magnetic/nonmagnetic structure in a thin sandwiched Ni layer [Si(5 nm)/Ni(10 nm)/Si] by a focused ion beam (FIB) irradiation has been attempted. A control experiment was initially performed by irradiation with a…
Strain-induced transitions of polarization reversal in thin films of a ferrielectric CuInP$_2$S$_6$ (CIPS) with ideally-conductive electrodes is explored using the Landau-Ginzburg-Devonshire (LGD) approach with an eighth-order free energy…
Optical materials with centrosymmetry, such as silicon and germanium, are unfortunately absent of second-order nonlinear optical responses, hindering their developments in efficient nonlinear optical devices. Here, a design with an array of…
While all media can exhibit first-order conductivity describing current linearly proportional to electric field, $E$, the second-order conductivity, $\sigma^{(2)}$ , relating current to $E^2$, is nonzero only when inversion symmetry is…
The dc-current-induced optical second-harmonic generation is observed at the surface of centrosymmetric single crystal of Si. Surface dc-current with density up to $\textit{j}_{max} \sim 10^{3}$ A/cm$^{2}$ results in break of inversion…
The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio…
We show that recently observed DC currents produced by below-the-bandgap femtosecond pulses [1] can be explained as nonlinear optical effects based on multi-photon quantum interference and creation of an asymmetric distribution of virtual…
Born effective charge (BEC), a fundamental quantity in lattice dynamics and ferroelectric theory, provides a quantitative measure of linear polarization response to ionic displacements. However, it does not account for higher-order effects,…
By using first-principles calculations, the electronic structure of planar and strained in-plane graphene/silicene heterostructure is studied. The heterostructure is found to be metallic in a strain range from -7% (compression) to +7%…
We report and classify the rich variety of patterns forming spontaneously in the oxide layer during the oscillatory photoelectrodissolution of n-type doped silicon electrodes under limited illumination. Remarkably, these patterns are often…