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This paper presents an output capacitor-less low-dropout regulator (LDO) with a bias switching scheme for biomedical applications with dual-range load currents. Power optimization is crucial for systems with multiple activation modes such…
Black phosphorous (BP), a two-dimensional (2D) material, has a direct bandgap, which fills up the bandgap lacuna left by graphene topological insulators and transition-metal dichalcogenides because of its dependence on the layers and…
Phase change materials (PCMs) have long been used as a storage medium in rewritable compact disk and later in random access memory. In recent years, the integration of PCMs with nanophotonic structures has introduced a new paradigm for…
The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von…
Two-dimensional (2D) layered semiconductors, with their ultimate atomic thickness, have shown promise to scale down transistors for modern integrated circuitry. However, the electrical contacts that connect these materials with external…
We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through…
Semiconducting monolayer of 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T phase…
On-chip integration of 2D materials provides a promising route towards next-generation integrated optical devices with performance beyond existing limits. Here, significantly enhanced spectral broadening induced by self-phase modulation…
Superconducting layered transition metal dichalcogenides (TMDs) stand out among other superconductors due to the tunable nature of the superconducting transition, coexistence with other collective electronic excitations (charge density…
Multi-bridge channel field effect transistor (MBCFET) provides several advantages over FinFET technology and is an attractive solution for sub-5 nm technology nodes. MBCFET is a natural choice for devices that use semiconducting layered…
We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by…
This paper examines the micro-parameters of superconductors. It studies the modulations from weak van der Waals interaction to strong covalence bonding of superconductors. In particular, we studied layered black phosphorus (BP) as a…
In this paper, we develop an analytic physics-based model to describe current conduction in ultra-thin black phosphorus (BP) field-effect transistors (FETs). The model extends the concept of virtual source charge calculation to capture the…
Heterostructures based on two dimensional (2D) materials offer the possibility to achieve synergistic functionalities which otherwise remain secluded by their individual counterparts. Herein ferroelectric polarization switching in…
The quest for a spin-polarized organic light emitting diode (spin-OLED) is a common goal in the emerging fields of molecular electronics and spintronics. In this device two ferromagnetic electrodes are used to enhance the…
Superconducting interferometers are quantum devices able to transduce a magnetic flux into an electrical output with excellent sensitivity, integrability and power consumption. Yet, their voltage response is intrinsically non-linear, a…
Integrating 2D materials onto on-chip photonic devices holds significant potential for nonlinear frequency conversion across various applications. The lack of inversion symmetry in monolayers of transition metal dichalcogenides (TMDs),…
This paper reports on the physical and temperature-dependent electrical characterizations of the oxide/semiconductor interface in MOS capacitors with a SiO2 layer deposited on 4H-SiC using dichlorosilane and nitrogen-based vapor precursors.…
In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The…
We report fabrication and characteristics of an organic monolayer based Metal Oxide Semiconductor (MOS) device. In place of SiO2 oxide layer in the MOS configuration, we used 1H, 1H, 2H, 2H- perfluorooctyl trichlorosilane (FOTS)…