Related papers: Multiple-stable anisotropic magnetoresistance memo…
The change of a material's electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related…
We develop a theory of the anisotropic magnetoresistance (AMR) effects of arbitrary directions of current and magnetization for ferromagnets. Here, we use the electron scattering theory with the $s$--$s$ and $s$--$d$ scattering processes,…
The electrical resistivity, anisotropic magnetoresistance (AMR), and anomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films has been investigated. The data show a behavior characteristic for a ferromagnetic…
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…
Composite multiferroics consisting of a ferroelectric material interfaced with a ferromagnetic material can function above room temperature and exhibit improved magnetoelectric (ME) coupling compared to single-phase multiferroic materials,…
As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes…
We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in…
We predict a huge anisotropic thermal magnetoresistance (ATMR) in the near-field radiative heat transfer between magneto-optical particles when the direction of an external magnetic field is changed with respect to the heat current…
The recent discovery of altermagnetism has sparked growing interest in compensated magnetic systems as promising platforms for highly scalable spintronics. Altermagnetism is a distinct magnetic order where opposite spin sublattices are…
A set of thin film Mn$_x$Si$_{1-x}$ alloy samples with different manganese concentration x = 0.44 - 0.63 grown by the pulsed laser deposition (PLD) method onto the Al$_2$O$_3$(0001) substrate was investigated in the temperature range 4 -…
Antiferromagnets (AFMs) are presently considered as promising materials for applications in spintronics and random access memories due to the robustness of information stored in AFM state against perturbing magnetic fields (P. Wadley et…
In this work, we systematically investigate the effect of Anti-site Disorder (ASD) on electrical resistivity $\rho(T)$ and transverse magnetoresistance $MR_{\perp}$ in off-stoichiometric Co-Fe-Ti-Si (CFTS) thin films across the…
Polar metals with ferroelectric-like displacements in metals have been achieved recently, half century later than Anderson and Blount's prediction. However, the genuine ferroelectricity with electrical dipolar switching has not yet been…
The antiferromagnetic topological insulator MnBi2Te4 (MBT) exhibits an ideal platform to study exotic topological phenomena and magnetic properties. The transport signatures of magnetic phase transitions in the MBT family materials have…
Tuneable capacitors are vital for adaptive and reconfigurable electronics, yet existing approaches require continuous bias or mechanical actuation. Here we demonstrate a voltage-programmable ferroelectric memcapacitor based on HfZrO that…
The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in…
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…
Quasi-two dimensional transition metal dichalcogenides (TMD) exhibit dramatic properties that may transform electronic and photonic devices. We report on how the anomalously large magnetoresistance (MR) observed under high magnetic field in…
The angular-dependent magnetoresistance (AMR) of the ab plane is measured on the single crystals of FeSe1-xSx (x = 0, 0.07, 0.13 and 1) and FeSe1-yTey (y = 0.06, 0.61 and 1) at various temperatures under fields up to 9 T. A pronounced…
We have performed a systematic investigation of magnetotransport of a series of as-grown and annealed Ga1-xMnxAs samples with 0.011 <= x <= 0.09. We find that the anisotropic magnetoresistance (AMR) generally decreases with increasing…