Related papers: Electrical control of the valley Hall effect in bi…
Electrons in 2-dimensional crystals with a honeycomb lattice structure possess a new valley degree of freedom (DOF) in addition to charge and spin. Each valley is predicted to exhibit a Hall effect in the absence of a magnetic field whose…
The valley degree of freedom of electrons in two-dimensional transition metal dichalcogenides has been extensively studied by theory, optical and optoelectronic experiments. However, generation and detection of pure valley current without…
Electronic and spintronic devices rely on the fact that free charge carriers in solids carry electric charge and spin, respectively. There are, however, other properties of charge carriers that might be exploited in new families of devices.…
The topological properties of a material's electronic structure are encoded in its Berry curvature, a quantity which is intimately related to the transverse electrical conductivity. In transition metal dichalcogenides with broken inversion…
Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE…
We have investigated the valley degeneracy of MoS2 multilayers and its effect on thermoelectric properties. By modulating the layer thickness and external electric field, the hole valleys at {\Gamma} and K points in the highest energy…
Valley-contrasting Hall transport conventionally relies on the inversion symmetry breaking in two-dimensional systems, which greatly limits the selection range of valley materials. In particular, while monolayer transition metal…
Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were predicted to exhibit opposite Hall effects for electrons…
A monolayer of $MoS_{2}$ has a non-centrosymmetric crystal structure, with spin polarized bands. It is a two valley semiconductor with direct gap falling in the visible range of the electromagnetic spectrum. Its optical properties are of…
Electrons in certain two-dimensional crystals possess a pseudospin degree of freedom associated with the existence of two inequivalent valleys in the Brillouin zone. If, as in monolayer MoS2, inversion symmetry is broken and time-reversal…
We theoretically demonstrate that 100\% valley-polarized transport in monolayers of MoS$_{2}$ and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant…
We show theoretically that two-dimensional direct-gap semiconductors with a valley degree of freedom, including monolayer transition-metal dichalcogenides and gapped bilayer graphene, have a longitudinal magnetoconductivity contribution…
We study electron transport in monolayer molybdenum disulfide MoS$_2$ subjected to a magnetic barrier. Our analysis employs a full-band continuum model to capture the relevant physical phenomena. We focus on how electron energy, magnetic…
The valley degree of freedom of electrons in materials promises routes toward energy-efficient information storage with enticing prospects towards quantum information processing. Current challenges in utilizing valley polarization are…
Crystal symmetry of two-dimensional (2D) materials plays an important role in their electronic and optical properties. Engineering symmetry in 2D materials has recently emerged as a promising way to achieve novel properties and functions.…
A photoinduced current of a layered MoS2-based transistor is studied from first-principles. Under the illumination of circular polarized light, a valley-polarized current is generated, which can be tuned by the gate voltage. For monolayer…
In monolayer group-VI transition metal dichalcogenides (TMDC), charge carriers have spin and valley degrees of freedom, both associated with magnetic moments. On the other hand, the layer degree of freedom in multilayers is associated with…
The chirality of electronic Bloch bands is responsible for many intriguing properties of layered two-dimensional materials. We show that in bilayers of transition metal dichalcogenides (TMDCs), unlike in few-layer graphene and monolayer…
Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…
The band structure of many semiconducting monolayer transition metal dichalcogenides (TMDs) possesses two degenerate valleys, with equal and opposite Berry curvature. It has been predicted that, when illuminated with circularly polarized…