Related papers: Multilayer Graphene Nanoribbon and Carbon Nanotube…
The recent fabrication of graphene nanoribbon (GNR) field-effect transistors poses a challenge for first-principles modeling of carbon nanoelectronics due to many thousand atoms present in the device. The state of the art quantum transport…
Superconducting electronics represents a promising technology, offering not only efficient integration with quantum computing systems, but also the potential for significant power reduction in high-performance computing. Nonetheless, the…
Graphene nanoribbons (GNRs) are a family of one-dimensional (1D) materials carved from graphene lattice. GNRs possess high mobility and current carrying capability, sizable bandgap, and versatile electronic properties tailored by the…
The creation of multilayer graphene (Gr), while preserving the brilliant properties of monolayer Gr derived from its unique band structure, can expand the application field of Gr to the macroscale. However, the energy-favorable AB stacking…
Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfils…
Neuromorphic devices have gained significant attention as potential building blocks for the next generation of computing technologies owing to their ability to emulate the functionalities of biological nervous systems. The essential…
Carbon nanotube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure.…
We propose an all-photonic, non-volatile memory and processing element based on phase-change thin-films deposited onto nanophotonic waveguides. Using photonic microring resonators partially covered with Ge2Sb2Te5 (GST) multi-level memory…
Doped graphene emerges as a strong contender for active plasmonic material in the mid-infrared wavelengths due to the versatile external-control of its permittivity-function and also its highly-compressed graphene surface plasmon (GSP)…
Aligned graphene nanoribbon (GNR) arrays were made by unzipping of aligned single-walled and few-walled carbon nanotube (CNT) arrays. Nanotube unzipping was achieved by a polymer-protected Ar plasma etching method, and the resulting…
Graphene with its dispersion relation resembling that of photons offers ample opportunities for applications in electron optics. The spacial variation of carrier density by external gates can be used to create electron waveguides, in…
We propose carbon as new resistive memory material for non-volatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like conductive carbon and insulating carbon for their possible application as…
Graphene based transistors relying on a conventional structure cannot switch properly because of the absence of an energy gap in graphene. To overcome this limitation, a barristor device was proposed, whose operation is based on the…
Electron devices based on graphene have lately received a considerable interest; in fact, they could represent the ultimate miniaturization, since the active area is only one atom tick. However, the gapless dispersion relation of graphene…
Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show…
The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the…
The basic building blocks for Resonant Tunnelling Diode (RTD) logic circuits are Threshold Gates (TGs) instead of the conventional Boolean gates (AND, OR, NAND, NOR) due to the fact that, when designing with RTDs, threshold gates can be…
Graphene nanoribbon (GNR) emerges as an exceptionally promising channel candidate due to its tunable sizable bandgap (0-3 eV), ultrahigh carrier mobility (up to 4600 cm^(2) V^(-1) s^(-1)), and excellent device performance (current on-off…
As one of the most important members of the two dimensional chalcogenide family, molybdenum disulphide (MoS2) has played a fundamental role in the advancement of low dimensional electronic, optoelectronic and piezoelectric designs. Here, we…
Conductance fluctuation is usually unavoidable in graphene nanoribbons (GNR) due to the presence of disorder along its edges. By measuring the low-frequency noise in GNR devices, we find that the conductance fluctuation is strongly…