Related papers: Interface-driven spin-torque ferromagnetic resonan…
The origin of spin-orbit torques generated from the conversion of charge-to-spin currents is of considerable debate. Solid understanding of the physics behind is key to the development of current and voltage controlled switching dynamics in…
We investigate spin relaxation dynamics of interlayer excitons in a MoSe2/MoS2 heterostructure induced by the Rashba effect. In such a system, Rashba interactions arise from an out-of-plane electric field due to photo-generated interlayer…
We propose and analyze a four-terminal metal-semiconductor device that uses hot-electron transport through thin ferromagnetic films to inject and detect a charge-coupled spin current transported through the conduction band of an arbitrary…
In this paper we present spin-to-charge current conversion properties in the Weyl semimetal TaP by means of the inverse Rashba-Edelstein effect (IREE) with the integration of this quantum material with the ferromagnetic metal Permalloy…
For graphene nanoribbons with Rashba spin-orbit coupling, the peculiar magnetic response due to the presence of a magnetization and geometric confinement are analyzed within a tight-binding model. We observe a sizable transverse…
The non-equilibrium transportation of two-dimensional electrons through a narrow channel is investigated under the influence of the Rashba interaction. By introducing suitable lifetime in the Green's function, the average spin values can be…
Spin-orbit interaction and structure inversion asymmetry in combination with magnetic ordering is a promising route to novel materials with highly mobile spin-polarized carriers at the surface. Spin-resolved measurements of the…
The possibility of utilizing the rich spin-dependent properties of graphene has attracted great attention in pursuit of spintronics advances. The promise of high-speed and low-energy consumption devices motivates a search for layered…
Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO$_2$ MOS field effect transistor (MOSFET), possess trap states that can be visualized with electrically-detected spin resonance…
We investigate the spin-polarized transport properties of a two-dimensional electron gas in a n-type diluted magnetic narrow gap semiconductor quantum well subjected to a perpendicular magnetic and electric field. Interesting beating…
Several spin-orbit effects allow performing spin to charge inter-conversion: the spin Hall effects, the Rashba effect, or the spin-momentum locking in topological insulators. Here we focus on how the detection of this inter-conversion can…
We study analytically the Rashba-Edelstein magnetoresistance (REMR) in a structure made from an insulator ferromagnet, such as yttrium iron garnet (YIG), and a 2D material (2DM) with direct and inverse Rashba-Edelstein effects, such as SLG…
Spin accumulation in a 2D electron gas with Rashba spin-orbit interaction subject to an electric field can take place without bulk spin currents (edge spin Hall effect). This is demonstrated for the collisional regime using the…
By performing density functional theory (DFT) and Green's functions calculations, complemented by X-ray Photoemission Spectroscopy, we investigate the electronic structure of Fe/GeTe(111), a prototypical ferromagnetic/Rashba-ferroelectric…
We theoretically study the direct and inverse spin Hall effects in a superconductor-normal metal-superconductor junction induced by a spin-orbit interaction that is invariant under spatial inversion. We show that a supercurrent induces a…
After one decade of the intensive theoretical and experimental explorations, whether interfacial spin-orbit coupling (ISOC) at metallic magnetic interfaces can effectively generate a spin current has remained in dispute. Here, utilizing the…
The exchange interaction between electrons and magnetic spins is considerably enhanced near interfaces, in magnetic multilayers. As a result, a dc current can be used to generate spin oscillations. We review theory and experimental…
The ability to engineer new states of matter and to control their electronic and spintronic properties by electric fields is at the heart of the modern information technology and driving force behind recent advances in van der Waals (vdW)…
Electrons in double-layer semiconductor heterostructures experience a special type of spin-orbit interaction which arises in each layer from the perpendicular component of the Coulomb electric field created by electron density fluctuations…
We report on the quantum interference and spin accumulation on double quantum dots with Rashba spin-orbit coupling and electron-electron interaction, based on the Keldysh nonequilibrium Green function formalism. It is shown that Rashba…