Related papers: SOI Pixel Sensor for Gamma-Ray Imaging
The use of the Silicon-on-Insulator (SOI) platform has been prominent for realizing CMOS-compatible, high-performance photonic integrated circuits (PICs). But in recent years, the silicon-nitride-on-silicon-dioxide (SiN-on-SiO$_2$) platform…
The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor featuring pixels of 30um x 37.5um and a small collection diode. The sensor is fabricated in a 180 nm CMOS imaging process, using two different pixel flavours: the first with a…
In this paper, we introduce a new approach to fabricate under the Silicon on Insulator (SOI) platform a 1x2 power splitter and scale it to 1xN system device from the proposed model. The current strategy of design is based on the well-known…
We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID…
Simulation studies and spectroscopic measurements are presented regarding the development of a pixel multilayer CdTe detector under development in the context of the COCAE project. The instrument will be used for the localization and…
This paper details preliminary photon measurements with the monolithic silicon detector ATLASPix, a pixel detector built and optimized for the CERN experiment ATLAS. The goal of this paper is to determine the promise of pixelated silicon in…
We have developed CMOS imaging sensor (XRPIX) using SOI (Silicon-On-Insulator) technology for the X-ray astronomical use. XRPIX(X-Ray soiPIXel) has advantage of a high time resolution, a high position resolution and an observation in a wide…
CLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is…
We present a smart pixel prototype readout integrated circuit (ROIC) designed in CMOS 28 nm bulk process, with in-pixel implementation of an artificial intelligence (AI) / machine learning (ML) based data filtering algorithm designed as…
X-ray detectors made of crystalline silicon have several advantages including low dark currents, fast charge collection and high energy resolution. For high-energy x-rays, however, silicon suffers from its low atomic number, which might…
The development of an innovative position sensitive pixelated sensor to detect and measure with high precision the coordinates of the ionizing particles is proposed. The silicon avalanche pixel sensors (APiX) is based on the vertical…
The Pixel 2010 conference focused on semiconductor pixel detectors for particle tracking/vertexing as well as for imaging, in particular for synchrotron light sources and XFELs. The big LHC hybrid pixel detectors have impressively started…
The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation…
Within the ATTRACT FASTPIX project, a monolithic pixel sensor demonstrator chip has been developed in a modified 180 nm CMOS imaging process technology, targeting sub-nanosecond timing precision for single ionising particles. It features a…
Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid…
The research and development of silicon-based X-ray fluorescence detectors achieved its submicron sensitivity. Its initial use is intended for in-situ beam monitoring at advanced light-source facilities. The effectively functioning…
Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are…
We present a compact, noise-resilient reconstructive spectrometer-on-a-chip that achieves high-resolution hyperspectral imaging across an extended near-infrared (NIR) range up to 1100nm. The device integrates monolithically fabricated…
Silicon p-n junction diodes emit low-intensity, broad-spectrum light near 1120 nm in forward bias and between 400-900 nm in reverse bias (avalanche). For the first time, we experimentally achieve optical absorption sensing of pigment in…
In order to take full advantage of the U.S. Department of Energy's billion-dollar investments into the next-generation research infrastructure (e.g., exascale, light sources, colliders), advances are required not only in detector technology…