Related papers: Room temperature write-read operations in antiferr…
High-order anisotropic magnetoresistance (AMR) is observed up to the 18th harmonic in cubic Fe(001) thin films, overturning the long-standing paradigm that only two- and four-fold terms are symmetry-allowed. Using angle-resolved transport…
Here we present a magnetic thin film with a weak ferrimagnetic (FIM) phase above the N\'eel temperature ($T_{N}$ = 240 K) and a non-collinear antiferromagnetic (AFM) phase below, exhibiting a small net magnetisation due to strain-associated…
We explore the behavior of the order parameter and the magnetization of antiferromagnetic solids subjected to mutually parallel staggered and magnetic fields. The effective field theory analysis of the partition function is taken up to the…
Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory…
We have systematically studied the antiferromagnetic and nematic transitions in Sr$_{1-x}$Ba$_x$Fe$_{1.97}$Ni$_{0.03}$As$_2$ by magnetic susceptibility and uniaxial-pressure resistivity measurements, respectively. The derivatives of the…
We present direct evidence of above room temperature magneto-electricity in single-phase Li0.05Ti0.02Ni0.93O with above-ambient antiferromagnetic ordering. Temperature-hysteresis in warming/cooling heat-flow thermograms establishes a…
On the basis of first-principles calculations we show that the M-type hexaferrite BaFe12O19 exhibits frustrated antiferroelectricity associated with its trigonal bipyramidal Fe3+ sites. The ferroelectric (FE) state of BaFe12O19, reachable…
We have performed detailed studies of the temperature evolution of the electronic structure in Ba(Fe(1-x)Ru(x))2As2 using Angle Resolved Photoemission Spectroscopy (ARPES). Surprisingly, we find that the binding energy of both hole and…
We study the low-temperature behavior of antiferromagnets in two spatial dimensions that are subjected to a magnetic field oriented perpendicular to the staggered magnetization order parameter. The evaluation of the partition function is…
Increasing the magnetic data recording density requires reducing the size of the individual memory elements of a recording layer as well as employing magnetic materials with temperature-dependent functionalities. Therefore, it is predicted…
Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to…
Antiferromagnets (AFMs) hold significant potential for spintronic devices owing to their insensitivity to external magnetic fields and the absence of stray fields. Beyond these inherent advantages, an AFM can manipulate the magnetic…
Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of…
Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms…
Electrical switching of N\'eel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically-driven switching of ferromagnetic order via spin-orbit torques, electrical switching of…
Magnetism in two-dimensional materials is not only of fundamental scientific interest but also a promising candidate for numerous applications. However, studies so far, especially the experimental ones, have been mostly limited to the…
We report neutron diffraction studies of FeS single crystals obtained from Rb$_x$Fe$_{2-y}$S$_2$ single crystals via a hydrothermal method. While no $\sqrt {5}\times \sqrt {5}$ iron vacancy order or block antiferromagnetic order typical of…
In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orders above room temperature are known. Moreover, these…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties…
We report on the magnetic properties of a special configuration of a FeRh thin film. An anomalous behavior on the magnetisation vs. temperature was observed when low magnetic fields are applied in the plane of a thin layer of FeRh deposited…