Related papers: Room temperature write-read operations in antiferr…

In the past five years, most of the paradigmatic concepts employed in spintronics have been replicated substituting ferromagnets by antiferromagnets in critical parts of the devices. The numerous research efforts directed to manipulate and…

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and…

FeRh based alloys may display an uncommon transition from a ferromagnetic to an antiferromagnetic state upon cooling. The transition takes place roughly above room temperature and it can be sensitively modulated by composition and external…

Changes of the magnetic and crystal structure on the microscopic scale in 40 nm FeRh thin films have been applied to investigate the phenomena of a disorder induced ferromagnetism at room temperature initiated through light ion-irradiation…

Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather…

Antiferromagnetic materials are promising platforms for the development of ultra-fast spintronics and magnonics due to their robust magnetism, high-frequency relativistic dynamics, low-loss transport, and the ability to support topological…

A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable…

Uncompensated moments in antiferromagnets are responsible for exchange bias in antiferromagnet/ferromagnet heterostructures; however, they are difficult to directly detect because any signal they contribute is typically overwhelmed by the…

Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected…

Magnetic relaxation in antiferromagnetic CoRh$_2$O$_4$ nanoparticles is investigated at 2 K by cooling the sample from a temperature (70 K) well above the antiferromagnetic ordering temperature at 27 K, following zero field cooled (ZFC) and…

The first order antiferromagnetic (AFM) to ferromagnetic (FM) transition in the functional material Fe49(Rh0.93Pd0.07)51 has been studied at low temperatures and high magnetic fields. We have addressed the non-monotonic variation of lower…

The heavy-fermion compound YbRh2Si2 exhibits an antiferromagnetic (AFM) phase transition at an extremely low temperature of TN = 70 mK. Upon applying a tiny magnetic field of Bc = 60 mT the AFM ordering is suppressed and the system is…

The magnetic field-pressure-temperature (H-P-T) phase diagram for first order antiferromagnetic (AFM) to ferromagnetic (FM) transition in Fe49(Rh0.93Pd0.07)51 has been constructed using resistivity measurements under simultaneous…

Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric…

Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule…

We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools…

We report an experimental and computational study of magnetic and electronic properties of the layered Ru(V) oxide SrRu2O6 (hexagonal, P-3 1m), which shows antiferromagnetic order with a N\'eel temperature of 563(2) K, among the highest for…

Coupled order parameters in phase-transition materials can be controlled using various driving forces such as temperature, magnetic and electric field, strain, spin-polarized currents and optical pulses. Tuning the material properties to…

Effect of Ge substitution on first order ferrimagnetic (FRI) - antiferromagnetic (AFM) transition in Mn$_2$Sb has been studied. It shows that transition temperature (T$_t$) can be tuned between 119~K - 271~K by substituting 2.5-10\% Ge at…

Thermal logic aims to create thermal counterparts to electronic circuits. In this work, we investigate experimentally the response of an analog memory device based on a thin film of an antiferromagnetic metal CuMnAs to bursts of heat pulses…