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We measured a change in the current transport of an antenna-coupled, multi-gate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the…

Mesoscale and Nanoscale Physics · Physics 2016-05-11 Gregory C. Dyer , Gregory R. Aizin , Sascha Preu , N. Q. Vinh , S. James Allen , John L. Reno , Eric A. Shaner

Experimental results of direct measurement of resonant monochromatic terahertz emission optically excited in InGaAs transistor channels are presented. The emission is attributed to two-dimensional plasma waves excited by photogeneration of…

Mesoscale and Nanoscale Physics · Physics 2011-07-22 P. Nouvel , J. Torres , H. Marinchio , T. Laurent , C. Palermo , L. Varani , P. Shiktorov , E. Starikov , V. Gruzinskis , F. Teppe

Optical control of helicity-dependent photocurrent in topological insulator Sb$_2$Te$_2$Se has been studied at room temperature on dominantly c-axis oriented granular polycrystalline samples grown by pulsed laser deposition technique.…

Mesoscale and Nanoscale Physics · Physics 2021-02-16 Samrat Roy , Subhadip Manna , Chiranjib Mitra , Bipul Pal

We have developed a terahertz radiation detector that measures both the amplitude and polarization of the electric field as a function of time. The device is a three-contact photoconductive receiver designed so that two orthogonal…

Other Condensed Matter · Physics 2007-05-23 E. Castro-Camus , J. Lloyd-Hughes , M. B. Johnston , M. D. Fraser , H. H. Tan , C. Jagadish

We report a fast, room temperature detection scheme for the polarization ellipticity of laser radiation, with a bandwidth that stretches from the infrared to the terahertz range. The device consists of two elements, one in front of the…

We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency…

We present an extensive study of resonant two-dimensional (2D) plasmon excitations in grating-gated quantum well heterostructures, which enable an electrical control of periodic charge carrier density profile. Our study combines theoretical…

Helicity-dependent photocurrent delta-I has been detected successfully under experimental configuration that a circularly polarized light beam is impinged with a right angle on a cleaved sidewall of the Fe/x-AlOx/GaAs-based n-i-p…

Optics · Physics 2014-04-17 H. Ikeda , N. Nishizawa , K. Nishibayashi , H. Munekata

Van der Waals heterostructures have emerged as a versatile platform to study correlated and topological electron physics. Spectroscopy experiments in the THz regime are crucial, since the energy of THz photons matches that of relevant…

We report on the observation of a nonlinear intensity dependence of the terahertz radiation induced ratchet effects in bilayer graphene with asymmetric dual grating gate lateral lattices. These nonlinear ratchet currents are studied in…

We report on a strong nonlinear behavior of the photogalvanics and photoconductivity under excitation of HgTe quantum wells (QWs) by intense terahertz (THz) radiation. The increasing radiation intensity causes an inversion of the sign of…

Plasmonic terahertz detection by a double-grating gate field-effect transistor structure with an asymmetric unit cell is studied theoretically. Detection responsivity exceeding 8 kV/W at room temperature in the photovoltaic response mode is…

Mesoscale and Nanoscale Physics · Physics 2015-06-03 V. V. Popov , D. V. Fateev , T. Otsuji , Y. M. Meziani , D. Coquillat , W. Knap

The emergence of ratchet effects in two-dimensional materials is strongly correlated with the introduction of asymmetry into the system. In general, dual-grating-gate structures forming lateral asymmetric superlattices provide a suitable…

Positive terahertz photoconductivity is observed at room temperature in CdHgTe thin films with different Cd contents. We show that electron gas heating caused by Drude-like absorption results in positive photoconductivity because of the…

We report on terahertz (THz) radiation under electrical pumping from a degenerate semiconductor possessing an electron accumulation layer. In InN, the random grating formed by topographical defects provides high-efficiency coupling of…

Materials Science · Physics 2015-05-19 T. V. Shubina , N. A. Gippius , V. A. Shalygin , A. V. Andrianov , S. V. Ivanov

One of the hallmarks of light-spin interaction in solids is the appearance of photocurrent that depends on the light helicity. Recent studies have shown that helicity dependent photocurrent (HDP) emerges due to light induced spin current…

Mesoscale and Nanoscale Physics · Physics 2021-06-02 H. Hirose , M. Kawaguchi , Y. -C. Lau , F. Freimuth , M. Hayashi

The effect of the photoinduced absorption of terahertz (THz) radiation in a semi-insulating GaAs crystal is studied by the pulsed THz transmission spectroscopy. We found that a broad-band modulation of THz radiation may be induced by a…

Applied Physics · Physics 2017-08-24 A. S. Kurdyubov , A. V. Trifonov , I. Ya. Gerlovin , I. V. Ignatiev , A. V. Kavokin

We observe enhanced three-fold symmetric helicity-dependent topological photocurrents using time-domain THz spectroscopy in epitaxially-grown Bi2Se3 with reduced crystallographic twinning. It is established how twinned crystal domains…

Mesoscale and Nanoscale Physics · Physics 2023-03-22 Blair C. Connelly , Patrick J. Taylor , George J. de Coster

Here we show the room temperature integrated detection of the helicity of photons with 1300 nm wavelength, via spin- photodiodes based on fully epitaxial Fe/MgO/Ge(001) heterostructures. These devices convert the photon helicity in a…

Materials Science · Physics 2011-10-26 C. Rinaldi , M. Cantoni , D. Petti , M. Leone , N. M. Caffrey , S. Sanvito , R. Bertacco

Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron…