Related papers: Evidence for defect-mediated tunneling in hexagona…
Interference of double moire patterns of graphene (G) encapsulated by hexagonal boron nitride (BN) can alter the electronic structure features near the primary/secondary Dirac points and the electron-hole symmetry introduced by a single…
We simulate the electronic and transport properties of metal/two-dimensional material/metal vertical heterostructures, with a focus on graphene, hexagonal boron nitride and two phases of molybdenum diselenide. Using density functional…
The control of elastic and inelastic electron tunneling relies on materials with well defined interfaces. Van der Waals materials made of two-dimensional constituents form an ideal platform for such studies. Signatures of acoustic phonons…
Creation of defect with predetermined optical, chemical and other characteristics is a powerful tool to enhance the functionalities of materials. Herewith, we utilize density functional theory to understand the microscopic mechanisms of…
Unlike the electrical conductance that can be widely modulated within the same material even in deep nanoscale devices, tuning the thermal conductance within a single material system or nanostructure is extremely challenging and requires a…
Hexagonal boron nitride (h-BN) is a tantalizing material for solid-state quantum engineering. Analogously to three-dimensional wide-bandgap semiconductors like diamond, h-BN hosts isolated defects exhibiting visible fluorescence, and the…
Although point defects in hexagonal boron nitride exhibiting single-photon emission attract considerable interest, a broader understanding of defect physics and chemistry in hBN remains limited, potentially hindering further development.…
We report an investigation of the ferromagnetic semiconductor rare earth nitrides (RENs) for their potential for cryogenic-temperature electronics and spintronics application. We have indentified ohmic contacts suitable for the device…
Among a variety of layered materials used as building blocks in van der Waals heterostructures, hexagonal boron nitride (hBN) appears as an ideal platform for hosting optically-active defects owing to its large bandgap ($\sim 6$ eV). Here…
We use a tight binding approach and density functional theory calculations to study the band structure of graphene/hexagonal boron nitride bilayer system in the most stable configuration. We show that an electric field applied in the…
Hexagonal boron nitride (hBN) is a wide band gap material with both strong excitonic light emission in the ultraviolet and strong exciton-phonon coupling. Luminescence experiments performed on the recently synthesized monolayer form (m-hBN)…
Two-dimensional (2D) nitride materials such as hexagonal boron nitride (h-BN), graphitic carbon nitride (g-C$_3$N$_4$), and beryllonitrene (BeN$_4$) have emerged as promising candidates for next generation electronic, optoelectronic, and…
When using hexagonal boron-nitride (hBN) as a substrate for graphene, the resulting moir\'e pattern creates secondary Dirac points. By encapsulating a multilayer graphene within aligned hBN sheets the controlled moir\'e stacking may offer…
The integrated inplane growth of two dimensional materials with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge specific…
Interfacial interactions in two parallel-stacked hexagonal boron-nitride (hBN) layers facilitate sliding ferroelectricity, enabling novel device functionalities. Additionally, when Bernal or twisted bilayer graphene is aligned with an hBN…
In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be…
We investigate the phenomenon of reflectionless tunneling in ballistic normal-metal--superconductor (NS) structures, using a semiclassical formalism. It is shown that applied magnetic field and superconducting phase difference both impair…
Hexagonal boron nitride is a wide bandgap semiconductor with a very high thermal and chemical stability often used in devices operating under extreme conditions. The growth of high-purity crystals has recently revealed the potential of this…
The interplay between the electron transport in metal/ferroelectric/metal junctions with ultrathin ferroelectric barriers and the polarization state of a barrier is investigated. Using a model which takes into account screening of…
We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm2 at 10 mV, and 17.7 A/cm2 peak current)…