Related papers: Large-Gap Quantum Spin Hall States in Stanene Grow…
Magnetic topological states refer to a class of exotic phases in magnetic materials with their non-trivial topological property determined by magnetic spin configurations. An example of such states is the quantum anomalous Hall (QAH) state,…
We study the \nu=5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic (B) field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n=0 to 7.6…
Room-temperature realization of macroscopic quantum phenomena is one of the major pursuits in fundamental physics. The quantum spin Hall state, a topological quantum phenomenon that features a two-dimensional insulating bulk and a helical…
The quantum spin Hall (QSH) effect in the DC regime, which has been intensively researched, relies on the existence of symmetry-protected edge states. Here, we demonstrate that a QSH system behaves quite differently in response to an…
We present low temperature transport measurements on dual-gated suspended trilayer graphene in the quantum Hall (QH) regime. We observe QH plateaus at filling factors {\nu}=-8, -2, 2, 6, and 10, in agreement with the full-parameter tight…
Graphene properties can be manipulated by a periodic potential. Based on the tight-binding model, we study graphene under a one-dimensional (1D) modulated magnetic field which contains both a uniform and a staggered component. New chiral…
We introduce a novel two-dimensional electronic system with ultrastrong interlayer interactions, namely twisted bilayer graphene with a large twist angle, as an ideal ground for realizing interlayer-coherent excitonic condensates. In these…
Driven by various physical origins, the interesting reentrant phenomena in quantum Hall effect (QHE), quantum anomalous Hall effect (QAHE) and non-Hermitian systems have been discussed recently. Here, we present that the reentrant phenomena…
Realization of the quantum-spin-Hall effect in graphene devices has remained an outstanding challenge dating back to the inception of the field of topological insulators. Graphene's exceptionally weak spin-orbit coupling -stemming from…
The quantum spin Hall insulator (QSHI) state has been demonstrated in two semiconductor systems - HgTe/CdTe quantum wells (QWs) and InAs/GaSb QW bilayers. Unlike the HgTe/CdTe QWs, the inverted band gap in InAs/GaSb QW bilayers does not…
The quantum Hall effect, which exhibits a number of unusual properties, is studied in a gated 1000-nm-thick HgTe film, nominally a three-dimensional system. A weak zero plateau of Hall resistance, accompanied by a relatively small value of…
The high index (441) surface of bismuth has been studied using Scanning Tunnelling Microscopy (STM), Angle Resolved Photoemission Spectroscopy (APRES) and spin-resolved ARPES. The surface is strongly corrugated, exposing a regular array of…
We theoretically report that, with \textit{in-plane} magnetization, the quantum anomalous Hall effect (QAHE) can be realized in two-dimensional atomic crystal layers with preserved inversion symmetry but broken out-of-plane mirror…
Quantum Spin Hall (QSH) insulators with a large topologically nontrivial bulk gap are crucial for future applications of the QSH effect. Among these, group III-V monolayers and their halides with chair structure (regular hexagonal…
The quantum anomalous Hall effect (QAHE) is a topological state of matter with a quantized Hall resistance. It has been observed in some two-dimensional insulating materials such as magnetic topological insulator films and twisted bilayer…
We show that the extrinsic spin Hall effect can be engineered in monolayer graphene by decoration with small doses of adatoms, molecules, or nanoparticles originating local spin-orbit perturbations. The analysis of the single impurity…
Both quantum spin Hall and quantum anomalous Hall states are novel states of quantum matter with promising applications. We propose junction quantum wells comprising II-VI, III-V or IV semiconductors as a large class of new materials…
Monolayer WTe2 stripes are quantum spin Hall (QSH) insulators. Density functional theory was used for investigating the electronic properties of the stripes and steps in bilayer Td-WTe2. For the stripes oriented along the dimer chains of W…
We analyze the detailed structure of topological edge mode protection occuring in hexagonal quantum spin Hall (QSH) materials. We focus on bismuthene, antimonene, and arsenene on a SiC substrate, which, due to their large bulk gap, may…
The quantum spin Hall (QSH) effect, first predicted in graphene by Kane and Mele in 2004, has emerged as a prototypical platform for exploring spin-orbit coupling, topology, and electronic interactions. Initially realized experimentally in…