Related papers: Resonant tunneling in a quantum oxide superlattice
The tunneling through an opaque barrier with a strong oscillating component is investigated. It is shown, that in the strong perturbations regime (in contrast to the weak one), higher perturbations rate does not necessarily improve the…
Materials exhibiting reversible resistive switching in electrical fields are highly demanded for functional elements in oxide electronics. In particular, multilevel switching effects allow for advanced applications like neuromorphic…
Resonant tunneling through a quantum dot weakly coupled to Tomonaga-Luttinger liquids is discussed. The linear conductance due to sequential tunneling is calculated by solving a master equation for temperatures below and above the average…
Material disorders are one of the major sources of noise and loss in solid-state quantum devices, whose behaviors are often modeled as two-level systems (TLSs) formed by charge tunneling between neighboring sites. However, the role of their…
Resonant tunneling in an open mesoscopic quantum dot is proposed as a vehicle to realize a tunable Fermi-edge resonance with variable coupling strength. We solve the x-ray edge problem for a generic nonseparable scatterer and apply it to…
In this paper, we analyze vibration-assisted sequential tunneling (including current-voltage characteristics and zero-frequency shot noise) through a molecular quantum dot with two electronic orbitals asymmetrically coupled to the internal…
We theoretically study the dynamics of $n$-level spin-orbit coupled alkaline-earth fermionic atoms with SU($n$) symmetric interactions. We consider three dimensional lattices with tunneling along one dimension, and the internal levels…
Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current, and they make up the total electron transport in devices.…
We observe a resonance in the conductance of silicon tunneling devices with a delta-doped barrier. The position of the resonance indicates that it arises from tunneling through the B^+ state of the boron atoms of the delta-layer. Since the…
Ferroelectric tunnel junctions offer potential for non-volatile memory with low power, fast switching, and scalability, but their performance is limited by a high resistance-area product and a low tunnel electroresistance ratio. To address…
The tunneling path between the CuO2-layers in cuprate superconductors and a scanning tunneling microscope tip passes through a barrier made from other oxide layers. This opens up the possibility that inelastic processes in the barrier…
Narrow antiresonances going to zero transmission are found to occur for general (2n,0)(n,n)(2n,0) carbon nanotube heterostructures, whereas the complementary configuration, (n,n)(2n,0)(n,n), displays simple resonant tunneling behaviour. We…
We observe a series of sharp resonant features in the tunnelling differential conductance of InAs quantum dots. We found that dissipative quantum tunnelling has a strong influence on the operation of nano-devices. Because of such tunnelling…
The anomalous low-temperature properties of glasses arise from intrinsic excitable entities, so-called tunneling Two-Level-Systems (TLS), whose microscopic nature has been baffling solid-state physicists for decades. TLS have become…
In conventional superconductors, the interaction that pairs the electrons to form the superconducting state is mediated by lattice vibrations (phonons). In high-transition temperature (high-Tc) copper oxides, it is generally believed that…
We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a…
Periodic driving of quantum dots is analyzed as a basis for developing dynamic switching devices. We study transport through periodically modulated energy levels which are coupled to leads via tunneling coefficients. Utilizing Floquet…
Material defects give rise to parasitic two-level systems (TLS) which present a major source of decoherence in superconducting qubits. Here, we study a strongly coupled TLS that resides in the tunnel barrier of transmon qubit. We use…
The discovery of a two-dimensional electron gas (2DEG) at the interface between insulating oxides has led to a well-deserved level of excitement due to possible applications as "in-plane" all-oxide nanoelectronics. Here we expand the range…
We have measured the low-temperature transport properties of a quantum dot formed in a one-dimensional channel. In zero magnetic field this device shows quantized ballistic conductance plateaus with resonant tunneling peaks in each…